IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4647484950...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYK120N120C3


IGBT Transistors 1200V 220A XPT IGBT
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IXYS 323
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AUD 41.5643
Multiples of: 1

Single1200 V2.55 V30 V240 A100 nA  TO - 264 - 3TubeSiThrough Hole1.5 kW- 55 C+ 175 CPlanar
RGTH50TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 323
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AUD 3.0269
Multiples of: 1

 650 V1.6 V+/- 30 V50 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole174 W- 40 C+ 175 CRgth50ts65
NGTG12N60TF1G


IGBT Transistors 600V 12A IGBT TO-3PF
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ON Semiconductor 321
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AUD 1.4756
Multiples of: 1

 600 V1.6 V20 V24 A100 nA54 W TO - 3PF - 3LAmmo PackSiThrough Hole54 W  Ngtg12n60tf1g
IXYH30N120C3D1


IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
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IXYS 317
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AUD 10.9371
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Single1200 V3.7 V30 V66 A100 nA  TO - 247AD - 3TubeSiThrough Hole416 W- 55 C+ 150 CIxyh30n120
IXYK110N120B4


IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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IXYS 315
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AUD 27.4303
Multiples of: 1

Single1200 V - 30 V , + 30 V340 A    TubeSiThrough Hole1360 W- 55 C+ 175 C1200V XPTTM Gen 5
AFGHL75T65SQ


IGBT Trench Field Stop 650V 80A 375W Through Hole TO-247-3
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ON Semiconductor 314
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AUD 4.7771
Multiples of: 1

        TO - 247 - 3 VARIANTTube     Automotive, Aec - Q101
KGF25N120KDA


TO-247-3 IGBTs ROHS
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KEC 313
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AUD 1.6385
Multiples of: 1

                
IXYH50N65C3H1


IGBT Transistors 650V/130A XPTI C3-Class TO-247
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IXYS 313
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AUD 13.3886
Multiples of: 1

Single650 V1.74 V30 V130 A100 nA  TO - 247AD - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyh50n65
IHW40N135R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
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Infineon 312
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AUD 5.06
Multiples of: 1

Single1350 V1.65 V20 V80 A100 uA  TO - 247 - 3Tube Through Hole394 W- 40 C+ 175 CRc - H5
SGT75T65SDM1P7


TO-247-3L IGBTs ROHS
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Silan 226
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AUD 4.3541
Multiples of: 1

                
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