IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4647484950...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGTH40TS65GC11


ROHM Semiconductor IGBT Transistors
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ROHM 387
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AUD 2.1524
Multiples of: 1

 650 V1.6 V+/- 30 V40 A+/- 200 nA  TO - 247 - 3TubeSiThrough Hole144 W- 40 C+ 175 CRgth40ts65
FGA6560WDF


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor 384
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AUD 3.1554
Multiples of: 1

Single650 V1.8 V30 V120 A400 nA  TO - 3PNTubeSiThrough Hole306 W- 55 C+ 175 CFga6560wdf
IKP08N65F5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 383
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AUD 1.6284
Multiples of: 1

Single650 V1.9 V20 V18 A100 nA  TO - 220 - 3TubeSiThrough Hole70 W- 40 C+ 175 CTrenchstop 5 F5
IGW30N60H3


Transistor: IGBT; 600V; 30A; 187W; TO247-3
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Infineon 379
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AUD 1.8224
Multiples of: 1

      187 W         
AGW60N65


375W 60A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS
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ANHI 378
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AUD 2.7864
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AIKP20N60CTAKSA1


IGBT Transistors DISCRETES
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Infineon 377
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AUD 6.2444
Multiples of: 1

         TubeSi    600V Trenchstop
RGW00TS65GC11


IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
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ROHM 373
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AUD 5.1877
Multiples of: 1

Single650 V1.5 V30 V96 A200 nA  TO - 247N - 3TubeSiThrough Hole254 W- 40 C+ 175 C 
AOTF5B65M1


Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ
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Alpha & Omega 372
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AUD 1.0489
Multiples of: 1

  1.87 V   10 W         
IXGH10N170


IGBT Transistors 20 Amps 1700 V 4 V Rds
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IXYS 372
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AUD 11.1397
Multiples of: 1

Single1700 V 20 V    TO - 247AD - 3TubeSiThrough Hole - 55 C+ 150 CIxgh10n170
FSAM10SH60A


IGBT Transistors 600V10A SPM2
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ON Semiconductor 372
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AUD 114.5833
Multiples of: 1

 600 V2.5 V 10 A 43 W SPM32 - AATube Smd/Smt   Fsam10sh60
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