IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4647484950...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40N60UFDTU


Transistor: IGBT; 600V; 40A; 116W; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 378
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AUD 2.7023
Multiples of: 1

      116 W         
IKA15N65H5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 375
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AUD 1.4269
Multiples of: 1

Single650 V1.65 V+/- 20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
RGW00TS65GC11


IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
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ROHM 373
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AUD 5.1877
Multiples of: 1

Single650 V1.5 V30 V96 A200 nA  TO - 247N - 3TubeSiThrough Hole254 W- 40 C+ 175 C 
NCE40TD60BT


TO-247-3 IGBTs ROHS
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NCE Power 372
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AUD 1.5317
Multiples of: 1

                
FSAM10SH60A


IGBT Transistors 600V10A SPM2
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ON Semiconductor 372
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AUD 93.0357
Multiples of: 1

 600 V2.5 V 10 A 43 W SPM32 - AATube Smd/Smt   Fsam10sh60
AIKB50N65DH5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 370
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AUD 3.4414
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         Cut Tape      
AOTF10B60D


Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eon:0.35mJ; Eoff:0.16mJ
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Alpha & Omega 368
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AUD 2.14
Multiples of: 1

  1.53 V   16.7 W         
IGW75N60TFKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 75A
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Infineon 368
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AUD 3.2371
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Single600 V1.5 V+/- 20 V150 A100 nA  TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 175 CXgw75n60
IKZA75N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 395W Through Hole PG-TO247-4-3
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Infineon 364
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AUD 10.7643
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        TO - 247 - 4Tube     Trenchstop 5
IXYH10N170CV1


IGBT Transistors 1700V/10A XPT IGBT w/ Diode
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IXYS 364
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AUD 13.42
Multiples of: 1

Single1700 V4.1 V20 V36 A100 nA  TO - 247AD - 3TubeSiThrough Hole280 W- 55 C+ 175 C 
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