IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4647484950...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGTV00TK65GVC11


IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT
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ROHM 387
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AUD 5.4214
Multiples of: 1

Single650 V1.5 V30 V45 A200 nA  TO - 3PFMTubeSiThrough Hole94 W- 40 C+ 175 C 
RGC80TSX8RGC11


IGBT Transistors REVERSE CONDUCTING IGBT
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ROHM 385
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AUD 7.4498
Multiples of: 1

Single1.8 kV2.2 V30 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole535 W- 40 C+ 175 C 
IKW40N60H3


IGBT Transistors 600V 40A 306W
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Infineon 382
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AUD 3.5043
Multiples of: 1

Single600 V1.95 V20 V40 A100 nA306 W TO - 247TubeSiThrough Hole306 W- 40 C+ 150 CIkw40n60
IXYH40N90C3D1


IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
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IXYS 381
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AUD 11.3143
Multiples of: 1

Single900 V2.2 V20 V90 A100 nA  TO - 247AD - 3TubeSiThrough Hole500 W- 55 C+ 150 CIxyh40n90
AOTF15B60D


Transistor: IGBT; 600V; 15A; 25W; TO220F; Eoff: 0.11mJ; Eon: 0.42mJ
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Alpha & Omega 380
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AUD 3.2118
Multiples of: 1

  1.6 V   25 W         
STGW30V60DF


IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 376
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AUD 5.4
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 247TubeSiThrough Hole258 W- 55 C+ 175 CStgw30v60df
IKA15N65H5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 375
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AUD 1.496
Multiples of: 1

Single650 V1.65 V+/- 20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
RGW00TS65GC11


IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
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ROHM 373
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AUD 5.1877
Multiples of: 1

Single650 V1.5 V30 V96 A200 nA  TO - 247N - 3TubeSiThrough Hole254 W- 40 C+ 175 C 
AOTF10B60D


Transistor: IGBT; 600V; 10A; 16.7W; TO220F; Eon:0.35mJ; Eoff:0.16mJ
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Alpha & Omega 368
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AUD 2.22
Multiples of: 1

  1.53 V   16.7 W         
STGB20H60DF


IGBT Transistors 600 V, 20 A high speed trench gate field-stop IGBT
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STMicroelectronics 0
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AUD 1.3467
Multiples of: 1

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