IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWF30NC60S


Transistors Bipolar - BJT 30A 600V Fast IGBT 5kHz 1.9 VCE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 346
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AUD 3.3157
Multiples of: 1

Single 1.5 V     TO - 3PFTubeSiThrough Hole - 55 C+ 150 CStgwf30nc60s
RGW40TS65GC11


IGBT Transistors 650V 20A Field Stop Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 344
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AUD 3.795
Multiples of: 1

Single650 V1.9 V30 V40 A   TO - 247N - 3TubeSiThrough Hole136 W- 40 C+ 175 C 
STGW30V60DF


IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 342
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AUD 5.04
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 247TubeSiThrough Hole258 W- 55 C+ 175 CStgw30v60df
FGA30N60LSDTU


IGBT Transistors 30A 600V N-Ch Planar
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ON Semiconductor 339
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AUD 4.4866
Multiples of: 1

Single600 V +/- 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga30n60lsdtu
IKW75N65EL5XKSA1


Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5
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Infineon 338
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AUD 5.2329
Multiples of: 1

Single650 V1.1 V20 V80 A100 nA  PG - TO 247 - 3TubeSiThrough Hole536 W- 40 C+ 175 CTrenchstop 5 L5
STGW30M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
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STMicroelectronics 332
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AUD 2.2213
Multiples of: 343

Single650 V1.55 V+/- 20 V60 A+/- 250 nA  TO - 247 - 3 SiThrough Hole258 W- 55 C+ 175 CStgw30m65df2
IKW50N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 332
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AUD 3.6771
Multiples of: 1

Single650 V1.35 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole274 W- 40 C+ 175 CTrenchstop 5 S5
FGP5N60LS


IGBT Transistors 600V/5A Field Stop Low Vcesat
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ON Semiconductor 331
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AUD 1.1126
Multiples of: 1

 600 V1.8 V20 V10 A400 nA83 W TO - 220TubeSiThrough Hole83 W- 55 C+ 125 CFgp5n60
APT25GT120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 329
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AUD 9.1786
Multiples of: 1

Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
IXA17IF1200HJ


IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
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IXYS 324
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AUD 16.9371
Multiples of: 1

Single1200 V1.8 V20 V28 A500 nA  ISOPLUS 247 - 3TubeSiThrough Hole100 W- 55 C+ 150 CIxa17if1200
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