IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...4647484950...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKP20N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon 353
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AUD 1.6319
Multiples of: 1

Single650 V1.65 V20 V42 A100 nA  TO - 220 - 3TubeSiThrough Hole125 W- 40 C+ 175 CTrenchstop 5 H5
IGW75N65H5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 350
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AUD 3.3508
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Single650 V1.65 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
RGTH80TS65GC11


IGBT Transistors 650V 40A Trench IGBT Field Stop TO-247N
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ROHM 350
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AUD 3.9157
Multiples of: 1

Single650 V1.6 V+/- 30 V70 A200 nA  TO - 247N - 3Tube Through Hole234 W- 40 C+ 175 C 
SGF23N60UFTU


IGBT Transistors 600V/12A
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ON Semiconductor 349
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AUD 2.4021
Multiples of: 1

Single600 V2.1 V+/- 20 V23 A+/- 100 nA75 W TO - 3PF - 3Tube Through Hole - 55 C+ 150 CSgf23n60
RGW40TS65GC11


IGBT Transistors 650V 20A Field Stop Trench IGBT
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ROHM 344
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AUD 3.7869
Multiples of: 1

Single650 V1.9 V30 V40 A   TO - 247N - 3TubeSiThrough Hole136 W- 40 C+ 175 C 
IKP20N60TXKSA1


Transistor: IGBT; 600V; 20A; 166W; TO220-3
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Infineon 344
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AUD 1.533
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IGW40N65H5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: H5
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Infineon 340
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AUD 2.8567
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      250 W   Trenchstop 5    H5
STGP15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics 339
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AUD 1.4562
Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA115 W TO - 220 - 3TubeSiThrough Hole115 W- 55 C+ 175 CStgp15h60df
IGP30N60H3XKSA1


IGBT Transistors INDUSTRY 14
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Infineon 339
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AUD 1.9978
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RGS80TSX2DHRC11


IGBT Transistors 1200V 40A FIELD STOP TRENCH
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ROHM 334
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AUD 4.341
Multiples of: 1

Single1200 V1.7 V30 V 500 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole555 W- 40 C+ 175 C 
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