IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5152535455...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGCL60TS60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 307
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AUD 4.0952
Multiples of: 1

Single600 V1.4 V30 V48 A200 nA  TO - 247 - 3BulkSiThrough Hole111 W- 40 C+ 175 C 
FGL35N120FTDTU


Fairchild Semiconductor IGBT Transistors 1200V 35A Trench IGBT
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ON Semiconductor 303
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AUD 9.3973
Multiples of: 1

         TubeSi    Fgl35n120ftd
IXBX75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS 300
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AUD 100.5243
Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbx75n170
IXGT6N170


IGBT Transistors 12 Amps 1700 V 4 V Rds
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IXYS 296
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AUD 16.6257
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Single1700 V4 V20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt6n170
IXXH110N65C4


IGBT Transistors 650V/234A TRENCH IGBT GENX4 XPT
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IXYS 295
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AUD 14.2214
Multiples of: 1

Single650 V1.98 V20 V234 A100 nA  TO - 247AD - 3TubeSiThrough Hole880 W- 55 C+ 175 CIxxh110n65
STGB10NC60HDT4


IGBT Transistors N Ch 10A 600V
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STMicroelectronics 291
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AUD 1.1519
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60hd
IHW30N120R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1350V IGBT
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Infineon 277
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AUD 3.92
Multiples of: 1

Single1200 V1.55 V20 V60 A100 uA  TO - 247 - 3Tube Through Hole330 W- 40 C+ 175 CRc - H5
IKW30N65WR5XKSA1


Transistor: IGBT; 650V; 30A; 75W; TO247-3
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Infineon 202
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AUD 1.5054
Multiples of: 1

      75 W   Trenchstop 5     
FGY160T65SPD-F085


Trans IGBT Chip N-CH 650V 240A 3-Pin TO-247 Tube
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ON Semiconductor 192
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AUD 6.4388
Multiples of: 1

Single650 V1.6 V+/- 20 V240 A+/- 250 nA Aec - Q101TO - 247 - 3TubeSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
IGZ100N65H5XKSA1


Transistor: IGBT; 650V; 100A; 536W; TO247-4; Series: H5
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Infineon 155
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AUD 6.6345
Multiples of: 1

      536 W   Trenchstop 5    H5
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First...5152535455...

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