IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...5152535455...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGAF20N60SMD


Fairchild Semiconductor IGBT Transistors 600 V 40 A 62.5 W
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ON Semiconductor 304
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AUD 3.6847
Multiples of: 1

 600 V1.9 V20 V40 A400 nA  TO - 3PFTubeSiThrough Hole62.5 W- 55 C+ 175 CFgaf20n60
IXYN100N65A3


IGBT Transistors IGBT XPT-GENX3 (MINI
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IXYS 304
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AUD 31.5508
Multiples of: 1

         TubeSi    Planar
IXBX75N170


IGBT Transistors BIMOSFETS 1700V 200A
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IXYS 304
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AUD 87.3062
Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole - 55 C+ 150 CIxbx75n170
FGL35N120FTDTU


Fairchild Semiconductor IGBT Transistors 1200V 35A Trench IGBT
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ON Semiconductor 303
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AUD 10.2845
Multiples of: 1

         TubeSi    Fgl35n120ftd
STGW20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 301
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AUD 2.0952
Multiples of: 1

Single600 V1.8 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
FGY100T120SWD


TO-247-3LD IGBTs ROHS
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ON Semiconductor 298
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AUD 12.1068
Multiples of: 1

Single1.2 kV2.26 V- 20 V , 20 V200 A   TO - 247 - 3LDTubeSiThrough Hole866 W- 55 C+ 175 CFGY100T120SWD
AOTF10B60D2


Transistor: IGBT; 600V; 10A; 12W; TO220F; Eoff: 0.04mJ; Eon: 0.14mJ
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Alpha & Omega 296
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AUD 1.7111
Multiples of: 1

  1.55 V   12 W         
IXGN200N60B3


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A
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IXYS 296
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AUD 70.2358
Multiples of: 1

Single600 V1.35 V+/- 20 V300 A100 nA  SOT - 227B - 4TubeSiSmd/Smt830 W- 55 C+ 150 CIxgn200n60
IKW50N60H3


IGBT Transistors HIGH SPEED SWITCHING
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Infineon 293
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AUD 2.6295
Multiples of: 1

Single600 V2.25 V20 V100 A100 nA  TO - 247 - 3TubeSiThrough Hole333 W- 40 C+ 175 CIkw50n60
FGI3236_F085


Fairchild Semiconductor Motor Motion Ignition Controllers & Drivers EcoSPARK 320mJ 360V N-Chan Ignition
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ON Semiconductor 293
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AUD 3.1358
Multiples of: 1

        TO - 262TubeSiThrough Hole - 40 C+ 175 CFgi3236
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First...5152535455...

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