IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH50T65UPD


Fairchild Semiconductor IGBT Transistors 650 V 100 A 240 W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 3055
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AUD 6.4218
Multiples of: 450

 650 V2.1 V25 V100 A400 nA  TO - 247Tube Through Hole240 W- 55 C+ 175 CFgh50t65upd
IXGT10N170A


IGBT Transistors 20 Amps 1700 V 7 V Rds
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IXYS 552
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AUD 14.2127
Multiples of: 1

Single1.7 kV4.5 V20 V10 A100 nA  TO - 268 - 3TubeSiSmd/Smt140 W- 55 C+ 150 CIxgt10n170
IXYP20N65C3D1


IGBT Transistors IGBT XPT-GENX3
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IXYS 550
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AUD 3.0905
Multiples of: 1

         TubeSi    Planar
IGB50N60T


Transistor: IGBT; 600V; 50A; 333W; D2PAK
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Infineon 547
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AUD 4.1254
Multiples of: 1

      333 W         
IKP06N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 6A
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Infineon 540
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AUD 0.8032
Multiples of: 1

Single600 V1.5 V+/- 20 V12 A100 nA  TO - 220 - 3TubeSiThrough Hole88 W- 40 C+ 150 CIkp06n60
CRG40T120BK3SD


278W 40A 1.2kV TO-247-3 IGBTs ROHS
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CRMICRO 535
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AUD 2.8047
Multiples of: 1

                
IXYT85N120A4HV


IGBT Transistors IGBT XPT GEN 4 1200V TO268HV
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IXYS 534
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AUD 28.8095
Multiples of: 1

         Tube      
FGB3236_F085


Fairchild Semiconductor IGBT Transistors 320MJ 360V N-CH IGNITION IGBT
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ON Semiconductor 530
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AUD 3.0192
Multiples of: 1

         ReelSi    Fgb3236_F085
IRG4PC30FPBF


IGBT Transistors 600V Fast 1-8kHz
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Infineon 529
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AUD 3.3978
Multiples of: 1

Single600 V1.8 V+/- 20 V31 A100 nA100 W TO - 247TubeSiThrough Hole100 W- 55 C+ 150 C 
IKW50N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 383
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AUD 2.8071
Multiples of: 1

Single650 V2.1 V20 V80 A100 nA  PG - TO - 247 - 3TubeSiThrough Hole145 W- 40 C+ 175 CTrenchstop 5 H5
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