IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW50N65H5FKSA1


Transistor: IGBT; 650V; 50A; 305W; TO247-3; Series: H5
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Infineon 950
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AUD 2.6269
Multiples of: 1

      305 W   Trenchstop 5    H5
IKA15N65F5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 485
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AUD 1.6348
Multiples of: 1

Single650 V1.6 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
IKP20N60H3XKSA1


Transistor: IGBT; 600V; 20A; 85W; TO220-3; Series: H3
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Infineon 485
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AUD 1.7435
Multiples of: 500

      85 W   Trenchstop 3    H3
IKP20N65H5XKSA1


Transistor: IGBT; 650V; 20A; 125W; TO220-3; Series: H5
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Infineon 481
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AUD 3.6667
Multiples of: 1

      125 W        H5
IKA10N65ET6XKSA2


Transistor: IGBT; 650V; 9A; 20W; TO220FP; Series: T6
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Infineon 480
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AUD 1.8388
Multiples of: 1

      20 W   Trenchstop 6    T6
RGTVX6TS65GC11


IGBT Transistors 650V 80A TO-247N Field Stp Trnch IGBT
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ROHM 480
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AUD 6.9493
Multiples of: 1

Single650 V1.5 V30 V144 A200 nA  TO - 247N - 3TubeSiThrough Hole404 W- 40 C+ 175 C 
STGWA20HP65FB2


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics 478
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AUD 1.6517
Multiples of: 1

         Tube      
STGWT30V60DF


STMicroelectronics IGBT Transistors 600V 30A High Speed Trench Gate IGBT
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STMicroelectronics 478
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AUD 2.5119
Multiples of: 1

Single600 V2.35 V20 V60 A250 nA  TO - 3PTubeSiThrough Hole258 W- 55 C+ 175 C600 - 650V Igbts
STGWF30NC60S


Transistors Bipolar - BJT 30A 600V Fast IGBT 5kHz 1.9 VCE
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STMicroelectronics 478
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AUD 3.4397
Multiples of: 1

Single 1.5 V     TO - 3PFTubeSiThrough Hole - 55 C+ 150 CStgwf30nc60s
AIKB40N65DF5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon 477
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AUD 5.1294
Multiples of: 1

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