IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW50N60DTPXKSA1


Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
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Infineon 465
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AUD 2.0194
Multiples of: 1

      159.6 W   Trenchstop     
IKW40N65ES5XKSA1


IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
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Infineon 465
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AUD 2.5612
Multiples of: 1

Single650 V1.35 V20 V79 A100 nA  TO - 247 - 3TubeSiThrough Hole230 W- 40 C+ 175 CTrenchstop 5 S5
AIKW50N60CTXKSA1


IGBT Transistors DISCRETES
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Infineon 465
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AUD 9.5286
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         TubeSi    600V Trenchstop
IKP08N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon 464
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AUD 1.0819
Multiples of: 1

Single650 V1.95 V20 V18 A100 nA  TO - 220 - 3TubeSiThrough Hole70 W- 40 C+ 175 CTrenchstop 5 H5
IKW15N120H3FKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon 464
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AUD 3.1194
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Single1200 V2.05 V+/- 20 V30 A600 nA  TO - 247 - 3TubeSiThrough Hole217 W- 40 C+ 175 CXkw15n120
IKFW75N65EH5XKSA1


IGBT Trench Field Stop 650V 80A 148W Through Hole PG-HSIP247-3-2
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Infineon 464
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AUD 6.5302
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        TO - 247 - 3Tube     Trenchstop 5
STGWT20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics 463
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AUD 2.2175
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Single600 V2.3 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
IKA15N65H5XKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 461
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AUD 1.567
Multiples of: 1

Single650 V1.65 V+/- 20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole33.3 W- 40 C+ 175 CIka15n65
IGB20N60H3


Transistor: IGBT; 600V; 20A; 170W; D2PAK
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Infineon 460
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AUD 0.9916
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      170 W         
IKW40N65WR5XKSA1


Transistor: IGBT; 650V; 40A; 115W; TO247-3
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Infineon 457
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AUD 1.691
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      115 W   Trenchstop 5     
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