MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD70N10S312ATMA1


MOSFET N-CHANNEL_100
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Infineon 14181
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AUD 1.8457
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           Reel       
R6007JND3TL1


MOSFET NCH 600V 7A POWER
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ROHM 2425
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AUD 1.517
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7 A600 V780 mOhmsN - Channel 5 V- 55 C+ 150 C96 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V17.5 nCEnhancement Prestomos
STD105N10F7AG


STMicroelectronics MOSFET
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STMicroelectronics 2425
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AUD 1.5291
Multiples of: 2500

80 A100 V6.8 mOhmsN - Channel 2.5 V- 55 C+ 175 C120 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V61 nCEnhancementAec - Q101Stripfet
R6006JND3TL1


N-Channel 600 V 6A (Tc) 86W (Tc) Surface Mount TO-252
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ROHM 2425
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AUD 1.5349
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6 A600 V936 mOhmsN - Channel 5 V- 55 C+ 150 C86 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V15.5 nCEnhancement  
STD16N65M2


STMicroelectronics MOSFET
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STMicroelectronics 2425
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AUD 1.5705
Multiples of: 2500

11 A650 V320 mOhmsn - channel25 V2 V- 55 C+ 150 C110 Wsmd/smtDPAK - 3Cut Tapesi1 channel25 V19.5 nCenhancement  
IPD90N10S4L06ATMA1


MOSFET MOSFET
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Infineon 2425
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AUD 1.6483
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90 A100 V5.8 mOhmsN - Channel 1.1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel16 V98 nCEnhancementAec - Q101 
SI4842BDY-T1-E3


MOSFET 30V 23A 3.5W
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Vishay 2425
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AUD 1.7063
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel      Trenchfet
SI4497DY-T1-GE3


MOSFET -30V Vds 20V Vgs SO-8
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Vishay 2425
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AUD 1.7213
Multiples of: 2500

36 A30 V2.7 mOhmsP - Channel 2.5 V- 55 C+ 150 C7.8 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V285 nCEnhancement Trenchfet
RS6G122CHTB1


MOSFETs Nch 40V 225A, HSOP8, Power MOSFET
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ROHM 2425
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AUD 1.7567
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225 A40 V1.2 mOhmsN - Channel 4 V- 55 C+ 175 C125 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel20 V52 nCEnhancement  
SI4488DY-T1-GE3


Vishay Semiconductors MOSFET 150V 5.0A 3.1W 50mohm 10V
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Vishay 2425
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AUD 2.0147
Multiples of: 2500

3.5 A150 V50 mOhmsN - Channel20 V - 55 C+ 150 C1.56 WSmd/SmtSO - 8ReelSi     Trenchfet
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