MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HP8KC5TB1


MOSFETs HSOP8 2NCH 60V 12A
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ROHM 2425
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AUD 0.9293
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12 A60 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C20 WSMD/SMTHSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.1 nCEnhancement  
STD64N4F6AG


MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 2425
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AUD 0.9328
Multiples of: 2500

54 A40 V8.2 mOhmsN - Channel 2 V- 55 C+ 175 C60 WSmd/SmtDPAK - 3Cut Tape-1 Channel+/- 20 V44 nCEnhancementAec - Q101Stripfet
FDS8638


MOSFET 40/20V, N Chan PowerTrench
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ON Semiconductor 2425
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AUD 0.9356
Multiples of: 2500

18 A40 V4.3 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
STD7N65M2


STMicroelectronics MOSFET
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STMicroelectronics 2425
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AUD 1.0065
Multiples of: 2500

5 A650 V1.15 OhmsN - Channel 3 V- 55 C+ 150 C60 WSmd/SmtDPAK - 3ReelSi1 Channel25 V9 nC  Mdmesh
SI4164DY-T1-GE3


MOSFET 30V 30A 6.0W 3.2mohm @ 10V
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Vishay 2425
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AUD 1.0075
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
SI4090DY-T1-GE3


MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
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Vishay 2425
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AUD 1.019
Multiples of: 2500

19.7 A100 V8 mOhmsN - Channel 2 V- 55 C+ 150 C7.8 WSmd/SmtSO - 8ReelSi1 Channel20 V69 nCEnhancement Trenchfet
IPD096N08N3GATMA1


MOSFET TRENCH 40<-<100V
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Infineon 2425
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AUD 1.0276
Multiples of: 2500

73 A80 V7.9 mOhmsN - Channel 2 V- 55 C+ 175 C100 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V35 nCEnhancement Optimos
NTMS10P02R2G


P-Channel 20 V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
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ON Semiconductor 2425
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AUD 1.0444
Multiples of: 2500

8.8 A20 V20 mOhmsp - channel 600 mV- 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel- 2.5 V48 nCenhancement  
STD16N60M2


STMicroelectronics MOSFET
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STMicroelectronics 2425
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AUD 1.0576
Multiples of: 2500

         Smd/SmtTO - 252 - 3Reel       
DMTH4004SPSQ-13


MOSFET 40V N-Ch Enh FET Low Rdson
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Diodes Incorporated 2425
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AUD 1.0726
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100 A40 V2.7 mOhmsN - Channel 4 V- 55 C+ 175 C167 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel20 V68.6 nCEnhancementAec - Q101 
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