MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDS6375


Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
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ON Semiconductor 2425
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AUD 0.5789
Multiples of: 2500

            Powertrench®      
IPD60R360P7SAUMA1


MOSFET CONSUMER
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Infineon 2425
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AUD 0.6125
Multiples of: 2500

9 A600 V300 mOhmsN - Channel 3 V- 40 C+ 150 C41 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V13 nCEnhancement Coolmos
DMHC3025LSDQ-13


MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
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Diodes Incorporated 2425
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AUD 0.6222
Multiples of: 2500

6 A , - 4.2 A30 v , - 30 V19 mOhms , 43 mOhmsN - Channel, P - Channel 1 v , - 2 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8ReelSi4 Channel+/- 20 v , +/- 20 V11.7 nC , 11.4 nCEnhancementAec - Q101 
SI4228DY-T1-GE3


MOSFET 25 Volts 8 Amps 3.1 Watts
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Vishay 2425
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AUD 0.6437
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8ReelSi     Trenchfet
SI4948BEY-T1-GE3


MOSFET 60V 3.1A 2.4W 120mohm @ 10V
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Vishay 2425
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AUD 0.6793
Multiples of: 2500

   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
TSM098NM10CP ROG


MOSFETs 100V, 49A, Single, N-Channel Low Voltage MOSFETs
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Taiwan Semiconductor 2425
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AUD 0.6896
Multiples of: 1

49 A100 V9.8 mOhmsN - Channel 3.8 V- 55 C+ 150 C46 WSMD/SMTTO - 252 - A - 3Reel , Cut TapeSi1 Channel20 V26 nCEnhancement  
STD96N3LLH6


STMicroelectronics MOSFET N-Ch 30V 0.0037 Ohm 80A STripFET VI
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STMicroelectronics 2425
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AUD 0.7104
Multiples of: 2500

80 A30 V3.7 mOhmsN - Channel 2.5 V  70 WSmd/SmtDPAK - 3ReelSi1 Channel20 V20 nC Aec - Q101Stripfet
SI4948BEY-T1-E3


MOSFET 60V 3.1A 0.12Ohm
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Vishay 2425
Ships to you
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AUD 0.7183
Multiples of: 2500

3.1 A60 V120 mOhmsP - Channel 1 V- 55 C+ 175 C2.4 WSMD/SMTSOIC - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V22 nCEnhancement TrenchFET
SI4166DY-T1-GE3


N-Channel 30 V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
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Vishay 2425
Ships to you
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AUD 0.7396
Multiples of: 2500

30.5 A30 V3.9 mOhmsN - Channel 1.2 V- 55 C+ 150 C6.5 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V65 nCEnhancement TrenchFET
ZXMHC6A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 2425
Ships to you
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AUD 0.7698
Multiples of: 2500

1.8 A , 1.42 A60 V250 mOhms , 400 mOhmsN_And_P - channel 1 V- 55 C+ 150 C0.87 WSmd/smtSOIC - 8ReelSi4 Channel10 v , - 10 V3.2 nC , 5.7 nCEnhancement  
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