MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4056DY-T1-GE3


N-Channel 100 V 11.1A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
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Vishay 2425
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AUD 0.569
Multiples of: 2500

11.1 A100 V17 mOhmsN - Channel 1.5 V- 55 C+ 150 C5.7 WSmd/SmtSO - 8ReelSi1 Channel20 V29.5 nCEnhancement Trenchfet
STD25NF20


STMicroelectronics MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET
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STMicroelectronics 2425
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AUD 1.0838
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18 A200 V100 mOhmsN - Channel20 V3 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel10 V28 nCEnhancementAec - Q101Stripfet
FDD86369_F085


Fairchild Semiconductor MOSFET 80V 90A Dual DPAK N-Chnl PowerTrench
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ON Semiconductor 2425
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AUD 1.0983
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90 A80 V17.4 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi2 Channel+/- 20 V34 nCEnhancement  
FDD86369-F085


Trans MOSFET N-CH 80V 90A 3-Pin TO-252 T/R
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ON Semiconductor 2425
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AUD 1.0983
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90 A80 V17.4 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V34 nCEnhancementAec - Q101 
DMT6005LSS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 2425
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AUD 1.12
Multiples of: 2500

         Smd/SmtSO - 8Cut TapeSi      
AOD4126


MOSFET N-CH 100V 43A TO252
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Alpha & Omega 2425
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AUD 1.1277
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           -       
RS1E350BNTB


N-Channel 30 V 35A (Ta) 35W (Tc) Surface Mount 8-HSOP
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ROHM 2425
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AUD 1.1509
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35 A30 V1.2 mOhmsN - Channel 1 V- 55 C+ 150 C35 WSmd/SmtHSOP - 8ReelSi1 Channel20 V185 nCEnhancement  
FDD5353


Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; DPAK
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ON Semiconductor 2425
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AUD 1.1522
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            Powertrench®      
SPD15P10PGBTMA1


MOSFET P-Ch -100V 15A DPAK-2
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Infineon 2425
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AUD 1.1619
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15 A100 V160 mOhmsP - Channel 4 V- 55 C+ 175 C128 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V48 nCEnhancement  
STD110N8F6


MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 2425
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AUD 1.1731
Multiples of: 2500

80 A80 V6.5 mOhmsN - Channel 2.5 v to 4.5 V- 55 C+ 175 C167 WSmd/SmtDPAK - 3Cut Tape-1 Channel+/- 20 V150 nCEnhancement Stripfet
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