MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4062DY-T1-GE3


MOSFET 60V Vds 20V Vgs SO-8
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Vishay 2425
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AUD 1.184
Multiples of: 2500

32.1 A60 V4.2 mOhmsN - Channel 1.4 V- 55 C+ 150 C7.8 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V40 nCEnhancement Trenchfet
Hot SI4488DY-T1-E3


MOSFET 150V 5A 3.1W
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Vishay 2425
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AUD 1.1847
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel      Trenchfet
SI4114DY-T1-GE3


N-Channel 20 V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
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Vishay 2425
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AUD 1.2004
Multiples of: 2500

         Smd/SmtSO - 8-Si     Trenchfet
TQM250NH10LDCR RLG


MOSFETs 100V, 31A, Dual N-Channel Automotive MOSFETs Logic Level, RDS (max) = 25V
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Taiwan Semiconductor 2425
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AUD 1.2084
Multiples of: 1

31 A100 V25 mOhmsN - Channel 2.2 V- 55 C+ 175 C54 WSMD/SMTDFN56U - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V5.5 nCEnhancementAEC - Q101 
Hot HP8MA2TB1


MOSFET 30V NCH+PCH MIDDLE POWER
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ROHM 2425
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AUD 1.2264
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18 A , 15 A30 V9.6 mOhms , 17.9 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C7 WSmd/SmtHSOP - 8Cut TapeSi2 Channel20 V22 nC , 25 nCEnhancement  
IPD50N06S2L13ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 2425
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AUD 1.2422
Multiples of: 2500

50 A55 V12.7 mOhmsN - Channel 1.6 V- 55 C+ 175 C136 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V69 nCEnhancementAEC - Q101 
RCD080N25TL


N-Channel 250 V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3
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ROHM 2425
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AUD 1.2675
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8 A250 V N - Channel   + 150 C20 WSmd/SmtCPT3 , SOT - 428 , SC - 63ReelSi      
RCD100N20TL


Trans MOSFET N-CH 200V 10A Automotive 3-Pin(2+Tab) CPT T/R
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ROHM 2425
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AUD 1.2675
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           Tape And Reel    Enhancement  
FCD2250N80Z


Fairchild Semiconductor MOSFET
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ON Semiconductor 2425
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AUD 1.2688
Multiples of: 2500

2.6 A800 V2.25 OhmsN - Channel30 V4.5 V- 55 C+ 150 C39 WSmd/SmtDPAK - 3ReelSi 30 V14 nC  Superfet Ii
FDPF5N60NZ


MOSFET 600V, N-Channel MOSFET, UniFET-II
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ON Semiconductor 2425
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AUD 1.2907
Multiples of: 1

4.5 A600 V1.65 Ohmsn - channel 5 V + 150 C33 Wthrough holeTO - 220FTubesi1 channel25 V10 nC  unifet
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