MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RD3G08DBKHRBTL


MOSFETs TO252 N-CH 40V 80A
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ROHM 2425
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AUD 1.407
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80 A40 V4.1 mOhmsN - Channel 2.5 V- 55 C+ 175 C76 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel20 V28 nCEnhancementAEC - Q101 
IPP057N06N3GXKSA1


Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
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Infineon 2425
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AUD 1.4091
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            Optimos 3      
IPD65R660CFDAATMA1


MOSFET COOL MOS
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Infineon 2425
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AUD 1.4399
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          TO - 252 - 3ReelSi     Coolmos
R6002END3TL1


MOSFET Nch 600V 2A TO-252 (DPAK)
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AUD 1.4554
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1.7 A600 V3.4 OhmsN - Channel 2 V- 55 C+ 150 C26 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V6.5 nCEnhancement  
FDS2670


MOSFET SO-8 N-CH 200V
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ON Semiconductor 2425
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AUD 1.4698
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3 A200 V130 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement Powertrench
NDS9945


Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
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ON Semiconductor 2425
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AUD 1.4761
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   Dual N Channel               
IPD90N06S4L03ATMA2


60V 90A 150W 3.5mO@90A,10V N Channel TO-252-3-11 MOSFETs ROHS
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AUD 1.4836
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q100 
IPD200N15N3GATMA1


Infineon Technologies MOSFET
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Infineon 2425
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AUD 1.4976
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50 A150 V20 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V23 nCEnhancement Optimos
RS6E122BGTB1


MOSFETs HSOP8 N-CH 30V 155A
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ROHM 2425
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AUD 1.499
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155 A30 V2.16 mOhmsN - Channel 2.5 V- 55 C+ 150 C89 WSMD/SMTHSOP - 8Reel , Cut TapeSi1 Channel20 V50 nCEnhancement  
IPD100N06S403ATMA2


60V 100A 3.5mO@100A,10V 150W N Channel TO-252-3-11 MOSFETs ROHS
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AUD 1.5142
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
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