MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PT3407


SOT-23 MOSFETs ROHS
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PUOLOP 2667
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AUD 0.0371
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IPD320N20N3G


MOSFET N Channel 200V 34A(Tc) 4V @ 90uA 32mO @ 34A,10V TO-252 RoHS
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Infineon 2632
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AUD 2.0502
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WSF10N40


TO-252-2 MOSFETs ROHS
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Winsok 2631
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AUD 0.4652
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BUK9675-55A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 2631
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AUD 0.7503
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20 A55 V68 mOhmsN - Channel  - 55 C+ 175 C62 WSmd/SmtSOT - 404ReelSi1 Channel10 V Enhancement  
FDMS3662


MOSFET 100V N-Channel PowerTrench
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ON Semiconductor 2631
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AUD 2.3548
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8.9 A100 V14.8 mOhmsN - Channel  - 55 C+ 155 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V Enhancement Power Stage
PMV74EPER


MOSFET 30 V P-channel Trench MOSFET
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Nexperia 2630
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AUD 0.1346
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3.4 A30 V90 mOhmsP - Channel - 3 V- 55 C+ 150 C510 mWSmd/SmtTO - 236AB - 3Cut TapeSi1 Channel20 V5.7 nCEnhancement  
TP2104N3-G-P003


Microchip Technology MOSFET P-CH Enhancmnt Mode MOSFET
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Microchip 2630
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AUD 0.9818
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- 250 mA- 40 V10 OhmsP - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Reel 1 Channel20 V Enhancement  
NVD5C454NLT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 2629
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AUD 1.3479
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88 A40 V3.9 mOhmsN - Channel 1.2 V- 55 C+ 175 C56 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V43 nCEnhancementAec - Q101 
IPD65R225C7


MOSFET 650V CoolMOS C7 Power Trans; 225mOhm
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Infineon 2629
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AUD 1.4645
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11 A650 V225 mOhmsN - Channel20 V3 v to 4 V- 55 C+ 150 C63 WSmd/SmtDPAK - 2ReelSi1 Channel20 V20 nCEnhancement Coolmos
RSQ025P03HZGTR


MOSFET -30V P-CHANNEL -2.5A
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ROHM 2431
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AUD 0.4006
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2.5 A30 V110 mOhmsP - Channel 1 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 457T - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.4 nCEnhancementAEC - Q101 
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