MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN10H220L-7


Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
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Diodes Incorporated 101850
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AUD 0.1252
Multiples of: 3000

1.6 A100 V220 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel- +/- 16 V8.3 nCEnhancement  
RQ7E100ATTCR


MOSFET PCH -30V -10A SMALL SIGNAL
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ROHM 2638
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AUD 0.8636
Multiples of: 1

           Cut Tape       
SIHP12N60E-E3


MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
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Vishay 2638
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AUD 1.7731
Multiples of: 1

12 A600 V380 mOhmsn - channel 4 V- 55 C+ 150 C147 Wthrough holeTO - 220 - 3Tubesi1 channel30 V29 nCenhancement  
SIR512DP-T1-BE3


MOSFETs SOT669 100V 100A N-CH MOSFET
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Vishay 2636
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AUD 1.4054
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100 A100 V4.5 mOhmsN - Channel 4 V- 55 C+ 150 C96.2 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V41 nCEnhancement PowerPak
SUP53P06-20-E3


MOSFET 60V 53A 104.2W 19.5mohm @ 10V
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Vishay 2636
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AUD 2.2985
Multiples of: 1

53 A60 V16 mOhmsP - Channel 3 V- 55 C+ 150 C104.2 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V115 nCEnhancement Trenchfet
50P03DF


30V 50A 8.5m@10V,10A 5W 2.5V@250uA 1PCSPChannel PDFN-8(3x3) MOSFETs ROHS
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GOODWORK 2633
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AUD 0.1288
Multiples of: 5

                   
HSBB0056


100V 27A 28W 16mΩ@10V,10A 2.2V@250uA null PRPAK3x3 MOSFETs ROHS
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HUASHUO 2633
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AUD 0.2742
Multiples of: 5

                   
FDC8878


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 2633
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AUD 0.8149
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8 A30 V16 mOhmsN - Channel  - 55 C+ 150 C800 mWSmd/SmtSSOT - 6ReelSi1 Channel20 V   Powertrench
IRFR024TRLPBF


MOSFET N-Chan 60V 14 Amp
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Vishay 2633
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AUD 0.8718
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14 A60 V100 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V Enhancement  
SIA414DJ-T1-GE3


MOSFET 8.0V 12A 19W 11mohm @ 4.5V
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Vishay 2632
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AUD 0.9212
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SC - 70 - 6LReel       
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