MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RTR025P02HZGTL


MOSFET PCH -20V -2.5A SMALL SIGNAL MO
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ROHM 4747
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AUD 0.44
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2.5 A20 V95 mOhmsP - Channel - 2 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V7 nCEnhancementAec - Q101 
STD3NK100Z


MOSFET Hi Vltg NPN Zener SuperMESH
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STMicroelectronics 2624
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AUD 1.4024
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2.5 A1 kV6 OhmsN - Channel 3 V- 55 C+ 150 C90 WSmd/SmtDPAKReelSi1 Channel10 V18 nCEnhancement Supermesh
SIR680ADP-T1-BE3


MOSFETs N-CHANNEL 80-V (D-S) MOSFET
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Vishay 2623
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AUD 1.3643
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TP65H150G4LSG


MOSFET GAN FET 650V 13A TO220
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Transphorm 2622
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AUD 4.6346
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13 A650 V180 mOhmsN - Channel 4.8 V- 55 C+ 150 C52 WSMD/SMT8X8 PQFN Si1 Channel- 20 V , + 20 V8 nCEnhancement  
ATP404-H-TL-H


MOSFET NCH 4.5V DRIVE SERIES
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ON Semiconductor 2620
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AUD 1.45
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95 A60 V7.2 mOhmsN - Channel     Smd/SmtATPAK - 3Cut TapeSi      
SI7431DP-T1-GE3


MOSFET 200V 3.8A 5.4W 174mohm 10V
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Vishay 2619
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AUD 3.5168
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2.2 A- 200 V174 mOhmsP - Channel20 V4 V- 55 C+ 150 C1.9 WSmd/SmtSO - 8ReelSi1 Channel20 V88 nCEnhancement Trenchfet
BSS84K


null 130mA 225mW 4.5@4.5V,0.15A 1.5V@250uA SOT-23 MOSFETs ROHS
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Siliup 2619
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AUD 0.0105
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BSS138


null 220mA 350mW 2.5@4.5V,200mA 1V@250uA SOT-23 MOSFETs ROHS
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Siliup 2619
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AUD 0.0105
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2N7002LT1G-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 2619
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AUD 0.0109
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NDS8435A


30V 9A 18mO@10V,7A 4.2W P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 1542
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AUD 0.3871
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