MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTHS4101PT1G


ON Semiconductor MOSFET -20V -6.7A P-Channel
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ON Semiconductor 30498
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AUD 0.761
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- 6.7 A- 20 V42 mOhmsP - Channel8 V   1.3 WSmd/SmtCHIP - FET - 8ReelSi1 Channel8 V Enhancement  
TSM500N15CS RLG


MOSFET 150V, 11A, Single N-Channel Power MOSFET
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Taiwan Semiconductor 2614
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AUD 2.3846
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4 A , 11 A150 V50 mOhmsN - Channel 4 V- 55 C+ 150 C12.7 WSMD/SMTSOP - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V20.5 nCEnhancement  
SQJ415EP-T1_GE3


P-Channel 40 V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2613
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AUD 0.7354
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30 A40 V14 mOhmsP - Channel 2.5 V- 55 C+ 175 C45 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V95 nCEnhancement  
IPD5N25S3-430


Infineon Technologies MOSFET N-Ch 250V 5A DPAK-2
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Infineon 2611
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AUD 0.8504
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5 A250 V430 mOhmsn - channel 3 V- 55 C+ 175 C41 Wsmd/smtPG - TO - 252 - 3Cut Tapesi1 channel10 V4.7 nCenhancementaec - q101 
HT8MB5TB1


MOSFETs HSMT8 NPCH 40V 12A
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ROHM 2610
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AUD 0.8587
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12 A , 15 A40 V , 40 V47 mOhms , 56 mOhmsN - Channel, P - Channel 2.5 V , 2.5 V- 55 C+ 150 C13 WSMD/SMTH SMT - 8Reel , Cut TapeSi2 Channel20 V , 20 V3.5 nC , 16.7 nCEnhancement  
SPM4606


SOP-8 MOSFETs ROHS
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Shikues 2609
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AUD 0.0613
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MCG30N03A-TP


MOSFET N-Ch 30Vds 20Vgs 30A 100A 20W
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Micro Commercial Components (MCC) 2609
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AUD 0.3786
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           Cut Tape       
AP0903Q


MOSFET N Channel 30V 16A 3V @ 250uA 9mO @ 10A,10V PMPAK3*3 RoHS
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Quan Li 2599
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AUD 0.1207
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WSD86P10DN56


100V 86A 17mΩ@10V,20A 250W 2.8V@250uA P Channel DFN-8(5x6) MOSFETs ROHS
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Winsok 2519
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AUD 1.9458
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WSF4060


40V 60A 7.2mΩ@10V,20A 3W N Channel TO-252-3 MOSFETs ROHS
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Winsok 2462
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AUD 0.3605
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