MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMG6968U-7-F-VB


30V 6.5A 30mΩ@10V N Channel SOT23 MOSFETs ROHS
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VBsemi Elec 2555
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AUD 0.0893
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NTD6416ANLT4G


ON Semiconductor MOSFET NFET DPAK 100V 17A 106MO
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ON Semiconductor 2555
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AUD 0.9145
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19 A100 V74 mOhmsn - channel20 V1 V- 55 C+ 175 C71 Wsmd/smtDPAK - 3Reelsi1 channel10 V25 nCenhancement  
IQD005N04NM6SCATMA1


MOSFETs TRENCH <= 40V
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Infineon 2555
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AUD 3.0045
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597 A40 V490 uOhmsN - Channel 2.8 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V130 nCEnhancement OptiMOS
RQ5G040ATTCL


MOSFETs SC96 N CHAN 40V
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ROHM 2554
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AUD 0.261
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4 A40 V46 mOhmsP - Channel 2.5 V- 50 C+ 150 C1 WSMD/SMTSC - 96 - 3Reel , Cut TapeSi1 Channel- 20 V , 20 V16.8 nCEnhancement  
NTHD4P02FT1G


MOSFET -20V -3A P-Channel w/3A Schottky
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ON Semiconductor 2554
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AUD 0.5381
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3 A20 V200 mOhmsP - Channel  - 55 C+ 150 C1.1 WSmd/SmtCHIP - FET - 8ReelSi1 Channel12 V Enhancement  
IRFR2405TRLPBF


Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
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Infineon 2553
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AUD 0.9654
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56 A55 V16 mOhmsN - Channel    110 WSmd/SmtDPAKReelSi1 Channel20 V70 nC   
FDT86256


N-Channel 150 V 1.2A (Ta), 3A (Tc) 2.3W (Ta), 10W (Tc) Surface Mount SOT-223-4
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ON Semiconductor 2553
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AUD 0.9933
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1.2 A150 V695 mOhmsN - Channel 3.5 V  2.3 WSmd/SmtSOT - 223ReelSi1 Channel20 V1.2 nC  Powertrench
IPL60R185C7AUMA1


MOSFET HIGH POWER_NEW
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Infineon 2553
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AUD 2.1507
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           Cut Tape       
SK3415K


SC-59 MOSFETs ROHS
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Shikues 2551
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AUD 0.0417
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KO6401-HF


MOSFET P Channel 30V 5A 1.3V @ 250uA 47mO @ 5A,10V SOT23-6 RoHS
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KEXIN 2551
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AUD 0.05
Multiples of: 10

                   
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