MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2336DS-T1-GE3


MOSFET 30V Vds 8V Vgs SOT-23
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Vishay 8366
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AUD 0.2738
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5.2 A30 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V10 nCEnhancement Trenchfet
AO4411


30V 8A 27m@10V,7A 5W 1V@250uA SOP-8 MOSFETs ROHS
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TECH PUBLIC 5955
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AUD 0.0893
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IAUCN04S6N009TATMA1


MOSFETs N
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Infineon 3847
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AUD 1.5154
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           Reel , Cut TapeSi      
WST06P06


60V 5.5A 80mΩ@10V,3A 1.5W P Channel SOT-23-3L MOSFETs ROHS
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Winsok 2604
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AUD 0.166
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NX1029X,115


MOSFET 60/50V, 330/170 mA N/P-ch Trench MOSFET
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Nexperia 2603
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AUD 0.1264
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300 mA , 170 mA60 v , 50 V1.6 Ohms , 7.5 OhmsN And P - Channel 1.1 V- 55 C+ 150 C500 mWSmd/SmtSOT - 666ReelSi2 Channel10 v , - 10 V0.25 nC , 0.5 nCEnhancement  
DMN3730UFB-7


MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V
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Diodes Incorporated 2603
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AUD 0.2463
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730 mA30 V460 mOhmsN - Channel  - 55 C+ 150 C690 mWSmd/SmtDfn1006h4 - 3ReelSi1 Channel8 V1.6 nC   
SPD09P06PLGBTMA1


MOSFET P-Ch -60V 9.7A DPAK-2
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Infineon 2603
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AUD 0.4958
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9.7 A60 V200 mOhmsP - Channel 2 V- 55 C+ 175 C42 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21 nCEnhancement  
IPB108N15N3 G


MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
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Infineon 2602
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AUD 2.4463
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83 A150 V10.8 mOhmsN - Channel  - 55 C+ 175 C214 WSmd/SmtPG - TO 263 - 3ReelSi1 Channel20 V41 nCEnhancement Optimos
AON7804


Mosfet Array 2 N-Channel (Dual) 30V 9A 3.1W Surface Mount 8-DFN (3x3)
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Alpha & Omega 2601
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AUD 0.3239
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AGM325ME


30V 5.5A 1.15W 28m@10V,3.4A 1V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS
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AGM-Semi 2599
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AUD 0.0766
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