MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTLUS020N03CTAG


MOSFET T6 30V NCH 1.6X1.6 UDFN
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ON Semiconductor 2530
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AUD 0.7575
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8.2 A30 V13 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.52 WSmd/SmtUDFN - 6Cut Tape 1 Channel20 V5 nCEnhancement  
TPC8107&9-VB


30V 13.5A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 2527
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AUD 0.4499
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MSN4688


1.3W 1 N-Channel SOP-8 MOSFETs ROHS
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MASPOWER 2526
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AUD 0.2055
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SI3457CDV-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay 2526
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AUD 0.3087
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5.1 A20 V74 mOhmsP - Channel 3 V- 55 C+ 150 C3 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V15 nCEnhancement  
IRFZ44VZSPBF


Transistor: N-MOSFET; unipolar; 60V; 40A; 92W; D2PAK
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Infineon 2526
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AUD 1.9373
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57 A60 V9.6 mOhmsN - Channel 4 V- 55 C+ 175 C92 WSmd/SmtD2PAKTubeSi1 Channel20 V43 nC   
RSS070N05FRATB


MOSFET Nch 45V Vds 7A 0.025Rds(on) 12Qg
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ROHM 2525
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AUD 1.3255
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6.5 A60 V24 mOhmsN - Channel 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi1 Channel10 V11 nCEnhancementAec - Q101 
ISC300N20NM6ATMA1


MOSFETs OptiMOS 6 Power-Transistor, 200 V
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Infineon 2525
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AUD 1.7731
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44 A200 V30 mOhmsN - Channel 4.5 V- 55 C+ 175 C136 WSMD/SMTSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V17 nCEnhancement OptiMOS
DMT8012LFG-7


MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF
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Diodes Incorporated 2523
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AUD 0.6501
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9.5 A80 V14 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.2 WSmd/SmtPowerdi3333 - 8Cut TapeSi1 Channel20 V15 nCEnhancement  
IRFB4115PBFXKMA1


MOSFETs TRENCH >=100V
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Infineon 2523
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AUD 2.2493
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104 A150 V11 mOhmsN - Channel 5 V- 55 C+ 175 C380 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V77 nCEnhancement  
FDMD8260LET60


MOSFET 60V/20V Dual Nch Power Trench MOSFET
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ON Semiconductor 2522
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AUD 1.2683
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15 A60 V4.5 mOhmsN - Channel 1.5 V- 55 C+ 175 C44 WSmd/SmtPOWER - 12ReelSi2 Channel20 V49 nCEnhancement Power Clip
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