MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AGM325ME


30V 5.5A 1.15W 28m@10V,3.4A 1V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS
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AGM-Semi 2536
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AUD 0.1149
Multiples of: 5

                   
BSP320SH6433XTMA1


MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A
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Infineon 2536
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AUD 0.4746
Multiples of: 1

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NX3008CBKV,115


MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET
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Nexperia 2535
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AUD 0.1133
Multiples of: 1

400 mA30 V1 Ohms , 2.8 OhmsN And P - Channel 900 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 666ReelSi2 Channel8 V170 pC , 230 pCEnhancement  
RQ5E050ATTCL


MOSFET PCH -30V -5A SMALL SIGNAL
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ROHM 2535
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AUD 0.3858
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5 A30 V26 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V19.4 nCEnhancement  
SIRA12DDP-T1-UE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 2534
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AUD 0.2922
Multiples of: 1

                   
SQJQ510ER-T1_GE3


MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 2534
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AUD 2.9881
Multiples of: 1

225 A100 V1.86 mOhmsN - Channel 3.3 V- 55 C+ 175 C214 WSMD/SMTPOWERPAK - 8 Si1 Channel20 V88 nCEnhancement  
TK10A60D(STA4,X,S)


TO-220 MOSFETs ROHS
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Toshiba 2533
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AUD 0.89
Multiples of: 1

                   
IPB108N15N3 G


MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3
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Infineon 2532
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AUD 2.5612
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83 A150 V10.8 mOhmsN - Channel  - 55 C+ 175 C214 WSmd/SmtPG - TO 263 - 3ReelSi1 Channel20 V41 nCEnhancement Optimos
SL3416


SOT-23-3L MOSFETs ROHS
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SLKORMICRO 2531
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AUD 0.0143
Multiples of: 10

                   
KYL3407


SOT-23-3L MOSFETs ROHS
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Kang Yang 2531
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AUD 0.0403
Multiples of: 10

                   
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