MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WNM3025-3/TR


MOSFET DFN1006-3L RoHS
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Will Semiconductor 5965
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AUD 0.0619
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DMTH6010LPSQ-13


MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A
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Diodes Incorporated 2647
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AUD 0.8833
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13.5 A60 V6.4 mOhmsN - Channel 1 V- 55 C+ 175 C136 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V41.3 nCEnhancementAec - Q101 
STP20N90K5


MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-220 package
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STMicroelectronics 2647
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AUD 6.1624
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20 A900 V210 mOhmsN - Channel 3 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3 Si1 Channel30 V40 nCEnhancement  
RQ3G150GNTB


MOSFET Nch 40V 30Aw Si MOSFET
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ROHM 2646
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AUD 0.8669
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30 A40 V5.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C20 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V24.1 nCEnhancement  
RQ5A020ZPTL


MOSFET PCH -12V -2A SMALL SIGNAL
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ROHM 2645
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AUD 0.2479
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           Cut Tape       
RSJ250P10TL


ROHM Semiconductor MOSFET PWR MOSFET LOW RESIST DEVICE
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ROHM 2645
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AUD 2.2657
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25 A100 V45 mOhmsP - Channel 2.5 V- 55 C+ 150 C50 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V60 nCEnhancement  
SI3438DV-T1-E3


Vishay Semiconductors MOSFET 40V 7.4A 3.5W 35.5mohm 10V
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Vishay 2644
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AUD 0.6567
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5.5 A40 V35.5 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel20 V5.3 nCEnhancement Trenchfet
DMN3115UDM-7


Diodes Incorporated MOSFET 900mW 30Vdss
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Diodes Incorporated 2643
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AUD 0.2343
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3.2 A30 V60 mOhmsN - Channel  - 55 C+ 150 C900 mWSmd/SmtSOT - 26 - 6Reel 1 Channel8 V Enhancement  
TPM2299EX6-1


SOT-563 MOSFETs ROHS
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TECH PUBLIC 2633
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AUD 0.1064
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FDC2612


Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
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ON Semiconductor 2157
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AUD 0.5408
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