MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISS5812DN-T1-GE3


MOSFETs N-CHANNEL 80-V (D-S) MOSFET
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Vishay 2650
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AUD 0.5516
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42.8 A80 V13.5 mOhmsN - Channel 4 V- 55 C+ 150 C44.6 WSMD/SMTPOWERPAK - 1212 - 8SReel , Cut TapeSi1 Channel- 20 V , + 20 V10 nCEnhancement TrenchFET
STL21N65M5


Trans MOSFET N-CH 650V 17A 4-Pin Power Flat T/R
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STMicroelectronics 2650
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AUD 4.0881
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           Tape And Reel    Enhancement  
STU3N80K5


STMicroelectronics MOSFET N-Ch 800V 2.8Ohm typ 2.5A Zener-protected
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STMicroelectronics 2649
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AUD 0.8357
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2.5 A800 V3.5 Ohmsn - channel 3 V- 55 C+ 150 C60 Wthrough holeIPAK - 3Tubesi1 channel30 V9.5 nCenhancement mdmesh
SQJB46ELP-T1_BE3


40V 30A 34W 8mΩ@8A,10V 2.2V@250uA 2 N-Channel - MOSFETs ROHS
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Vishay 2648
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AUD 1.0435
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HD2312


20V 5A 18mO@4.5V,5A 350mW N Channel SOT-23 MOSFETs ROHS
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High Diode 2648
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AUD 0.0407
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NTR2101P


18V 3A 120mΩ@4.5V,3A 400mV@250uA P Channel SOT-23 MOSFETs ROHS
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Shikues 2648
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AUD 0.0474
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HSBA4115


40V 52A 10.5mΩ@10V,18A 52.1W 1.6V@250uA 222pF@15V P Channel 3.5nF@15V 27.9nC@4.5V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 2648
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AUD 0.2734
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NVLJWS013N03CLTAG


MOSFETs T6 30V LL 2X2 WDFNW6
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ON Semiconductor 2648
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AUD 0.4482
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35 A30 V18 mOhmsN - Channel 2 V- 55 C+ 175 C27 WSMD/SMTWDFNW - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V10 nCEnhancement  
IRFPE50PBF


N-Channel 800 V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC
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Vishay 2637
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AUD 3.4478
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7.8 A800 V1.2 OhmsN - Channel 2 V- 55 C+ 150 C190 WThrough HoleTO - 247AC - 3TubeSi1 Channel10 V200 nCEnhancement  
2KJ7102DFN


MOSFET PDFN3.3x3.3-8 RoHS
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KEXIN 2567
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AUD 0.1487
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