MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RH6E040BGTB1


MOSFETs Nch 30V 125A, HSMT8, Power MOSFET
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ROHM 2599
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AUD 1.1525
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125 A30 V2.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C78 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V30 nCEnhancement  
AOD4130


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 2597
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AUD 0.4556
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BSC196N10NS G


MOSFET OptiMOS 2 PWR TRANST 100V 45A
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Infineon 2597
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AUD 0.8258
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8.5 A100 V19.6 mOhmsN - Channel  - 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
PJQ5546V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2596
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AUD 0.5927
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79 A40 V5.9 CN - Channel 3.5 V- 55 C+ 175 C65 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancementAEC - Q101 
AON7418


N-Channel 30 V 46A (Ta), 50A (Tc) 6.2W (Ta), 83W (Tc) Surface Mount 8-DFN-EP (3.3x3.3)
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Alpha & Omega 2596
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AUD 0.7574
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FDBL86366_F085


Fairchild Semiconductor MOSFET N-Channel Power Trench MOSFET
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ON Semiconductor 2596
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AUD 2.5612
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220 A80 V6.1 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtMO - 299A - 8ReelSi1 Channel+/- 20 V86 nCEnhancement Powertrench
DMTH6010LPSQ-13


MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A
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Diodes Incorporated 2595
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AUD 1.0228
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13.5 A60 V6.4 mOhmsN - Channel 1 V- 55 C+ 175 C136 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V41.3 nCEnhancementAec - Q101 
AP6242


20V 12A null PQFN2x2 MOSFETs ROHS
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Quan Li 2594
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AUD 0.1342
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DMN10H220LFDF-7


MOSFETs MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K
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Diodes Incorporated 2594
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AUD 0.1942
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IPU60R2K1CEAKMA1


MOSFET CONSUMER
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Infineon 2594
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AUD 0.2922
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 600 V       Through HoleTO - 251 - 3TubeSi     Coolmos
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