MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2225L-7


Diodes Incorporated MOSFET P-Channel 1.08W
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Diodes Incorporated 3313
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AUD 0.0573
Multiples of: 5

2.6 A- 20 V110 mOhmsP - Channel12 V - 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
AOD409


TO-252 MOSFETs ROHS
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JSMSEMI 3306
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AUD 0.3885
Multiples of: 1

                   
TPH3R704PL,L1Q


MOSFET 40 Volt N-Channel
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Toshiba 3306
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AUD 0.6789
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92 A40 V6 mOhmsN - Channel 1.4 V- 55 C+ 175 C81 WSmd/SmtSOP - 8ReelSi1 Channel+/- 20 V27 nCEnhancement  
IPD028N06NF2SATMA1


MOSFETs N
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Infineon 3304
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AUD 1.0948
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139 A60 V2.85 mOhmsN - Channel 2.1 V- 55 C+ 175 C150 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V68 nCEnhancement StrongIRFET
PJA3471_R1_00501


Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
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Panjit 3302
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AUD 0.1978
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WM02DN70A


Transistor: N-MOSFET x2; unipolar; TSSOP8; common drain; ESD
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Wayon 3302
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AUD 0.2272
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RUL035N02FRATR


MOSFET Nch 20V Vds 3.5A 0.066Rds(on) 5.7Qg
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ROHM 3302
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AUD 0.2403
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3.5 A20 V31 mOhmsN - Channel 300 mV + 150 C1 WSmd/SmtTUMT - 6Cut TapeSi1 Channel4.5 V5.7 nCEnhancementAec - Q101 
SPA17N80C3


MOSFET COOL MOS PWR TRANS 800V 17A
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Infineon 2339
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AUD 3.1952
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17 A800 V290 mOhmsN - Channel 2.1 V- 55 C+ 150 C42 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel10 V177 nCEnhancement Coolmos
VN2222LL-G


Transistor: N-MOSFET; unipolar; 60V; 0.75A; TO92
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Microchip 1785
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AUD 0.5477
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230 mA60 V7.5 OhmsN - Channel 600 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
ZVP2106ASTZ


P-Channel 60 V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)
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Diodes Incorporated 1383
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AUD 0.5727
Multiples of: 1

- 280 mA- 60 V5 OhmsP - channel20 V - 55 C+ 150 C700 mWThrough_HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
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