MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2122DS-T1-BE3


MOSFETs N-CHANNEL 100-V (D-S) MOSFET
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Vishay 5921
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AUD 0.1658
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AOD484


TO-252 MOSFETs ROHS
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Youtai 3516
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AUD 0.1197
Multiples of: 5

                   
BSP129 H6327


Infineon Technologies MOSFET N-Ch 240V 350mA SOT-223-3
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Infineon 3012
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AUD 0.3579
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50 mA240 V6 OhmsN - Channel - 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V3.8 nCDepletion  
KNY8104A


DFN-8(5x6) MOSFETs ROHS
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KIA 3011
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AUD 0.0955
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NVTFWS002N04XMTAG


MOSFETs 40V T10M IN U8FL PACKAGE
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ON Semiconductor 3007
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AUD 0.6961
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114 A40 V2.45 mOhmsN - Channel 3.5 V- 55 C+ 175 C62 WSMD/SMTWDFN - 8Reel , Cut TapeSi1 Channel+ 20 V22 nCEnhancement  
HXY4435S


30V 9A 20mΩ@10V,7A P Channel SOP-8 MOSFETs ROHS
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HXY MOS 2958
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AUD 0.0919
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DMN4468LSS-13


MOSFET N-CHAN ENHNCMNT MODE
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Diodes Incorporated 2844
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AUD 0.2348
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10 A30 V20 mOhmsN - Channel  - 55 C+ 150 C1.52 WSmd/SmtSOP - 8ReelSi1 Channel20 V Enhancement  
FDN335N


MOSFET N Channel 20V 3A 1.0V @ 250uA 60mΩ @ 2.5A,4.5V SOT-23 RoHS
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HUASHUO 2813
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AUD 0.0443
Multiples of: 20

                   
PSMN1R0-40YLDX


NXP Semiconductors MOSFET N-CH 40V 1.1 mOhm logic level MOSFET
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Nexperia 2731
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AUD 1.2231
Multiples of: 1

100 A40 V1.1 mOhmsN - Channel20 V1.7 V- 55 C+ 150 C198 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V59 nCEnhancement  
IPB80N06S4L07ATMA2


MOSFET N-Ch 60V 80A D2PAK-2
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Infineon 2042
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AUD 1.2018
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