MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH4255DTRPBF


International Rectifier MOSFET 25V Single N-Ch HEXFET PWR 50A
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Infineon 3334
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AUD 2.347
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30 A , 30 A25 V , 25 V4.6 mOhms , 2.1 mOhmsN - Channel 1.1 V , 1.1 V- 55 C+ 150 C31 w , 38 WSmd/SmtPQFN - 8Cut TapeSi2 Channel20 V , 20 V10 nC , 23 nCEnhancement Fastirfet
IPD068N10N3G(UMW)


TO-252 MOSFETs ROHS
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Youtai 3330
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AUD 0.6422
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KCY3406A


DFN(5x6) MOSFETs ROHS
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KIA 3328
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AUD 0.2442
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BSC0910NDIATMA1


Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
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Infineon 3327
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AUD 1.3392
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            Optimos      
DMN4034SSS-13


N-Channel 40 V 5.4A (Ta) 1.56W (Ta) Surface Mount 8-SO
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Diodes Incorporated 3326
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AUD 0.4121
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5.4 A40 V34 mOhmsN - Channel  - 55 C+ 150 C1.56 WSmd/SmtSOIC - 8ReelSi1 Channel20 V4.9 nC   
BSO110N03MS G


MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
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Infineon 3324
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AUD 0.7119
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12.1 A30 V9.2 mOhmsN - Channel 1 V- 55 C+ 150 C2.5 WSmd/SmtDSOReelSi1 Channel20 V20 nCEnhancement Optimos
FDS3572


MOSFET 80V N-Channel PowerTrench
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ON Semiconductor 3324
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AUD 1.3392
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8.9 A80 V16 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
PJQ4546P-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 3322
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AUD 0.5378
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64 A40 V5.6 mOhmsN - Channel 2.3 V- 55 C+ 175 C42 WSMD/SMTDFN - 3333 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancementAEC - Q101 
IRFR4620TRLPBF


International Rectifier MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Infineon 3318
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AUD 0.6906
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24 A200 V78 mOhmsN - Channel20 V - 55 C+ 175 C144 WSmd/SmtDPAK - 3ReelSi1 Channel20 V25 nCEnhancement  
IRF620PBF


MOSFET N Trench 200V 5.2A 4V @ 250uA 800 mΩ @ 3.1A,10V TO-220 (TO-220-3) RoHS
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Vishay 3032
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AUD 0.6792
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5.2 A200 V800 mOhmsN - Channel 2 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V14 nCEnhancement  
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