MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLS3036TRLPBF


MOSFET N Trench 60V 195A 2.5V @ 250uA 2.4 mΩ @ 165A,10V TO-263-2 RoHS
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Infineon 3104
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AUD 2.7688
Multiples of: 800

270 A60 V2.4 mOhmsN - Channel 2.5 V + 175 C380 WSmd/SmtD2PAKReelSi1 Channel 140 nC   
IRFP3703PBF


N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC
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Infineon 3104
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AUD 3.3022
Multiples of: 400

210 A30 V2.8 mOhmsN - Channel20 V - 55 C+ 175 C230 WThrough HoleTO - 247 - 3Tube   209 nCEnhancement  
PHB32N06LT,118


Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W; D2PAK
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Nexperia 3102
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AUD 0.7503
Multiples of: 1

34 A60 V37 mOhmsN - Channel  - 55 C+ 175 C97 WSmd/SmtSOT - 404ReelSi1 Channel15 V Enhancement  
BSC016N03LS G


MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
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Infineon 3101
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AUD 1.2833
Multiples of: 1

100 A30 V1.3 mOhmsN - Channel 1 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V131 nCEnhancement Optimos
DMP2040UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3099
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AUD 0.1675
Multiples of: 1

13 A20 V38 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.5 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel12 V19 nCEnhancement  
BSP296NH6433XTMA1


MOSFET SMALL SIGNAL N-CH
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Infineon 3097
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AUD 0.3661
Multiples of: 1

1.2 A100 V329 mOhmsN - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel20 V6.7 nCEnhancement  
G33N03D3


MOSFET 2 N Channel(Double) 30V 33A(Tc) 1.1V @ 250uA 12mΩ @ 18A,10V DFN3.3*3.3-8L RoHS
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GOFORD 3094
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AUD 0.1668
Multiples of: 5

                   
IRF9317TRPBF


Transistor: P-MOSFET; unipolar; -30V; -16A; 2.5W; SO8
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Infineon 3094
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AUD 0.7224
Multiples of: 1

16 A30 V10.2 mOhmsP - Channel    2.5 WSmd/SmtSOIC - 8ReelSi 20 V31 nC   
WSD4076DN56


40V 76A 1.7W 6.9m@10V,12A 2.5V@250uA 1PCSNChannel DFN-8(5x6) MOSFETs ROHS
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Winsok 3093
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AUD 0.3514
Multiples of: 1

                   
AON7423


MOSFET P Trench 20V 28A 900mV @ 250uA 5 mΩ @ 20A,4.5V DFN 3.3x3.3 RoHS
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Alpha & Omega 3093
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AUD 0.5809
Multiples of: 1

                   
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