MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302 2.9A


20V 2.9A 1W 59mΩ@2.5V,2.5A N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yongyutai Electronics 3320
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AUD 0.0168
Multiples of: 50

                   
FDB2710


Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
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ON Semiconductor 3320
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AUD 4.5048
Multiples of: 1

                   
BSZ086P03NS3E G


Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
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Infineon 3319
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AUD 0.5659
Multiples of: 1

13.5 A- 30 V8.6 mOhmsP - Channel25 V- 3.1 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel25 V21.4 nCEnhancement Optimos
SSM6N15AFU,LF


Mosfet Array 2 N-Channel (Dual) 30V 100mA 300mW Surface Mount US6
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Toshiba 3317
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AUD 0.0958
Multiples of: 5

100 mA30 V3.6 OhmsN - Channel    300 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V    
WSD3067DN56


DFN-8(5.2x5.5) MOSFETs ROHS
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Winsok 3317
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AUD 0.3493
Multiples of: 5

                   
SDM4953-VB


30V 7.3A 29mΩ@10V,7.3A 2 P-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 3317
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AUD 0.3674
Multiples of: 1

                   
BSS225H6327FTSA1


Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
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Infineon 3287
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AUD 0.2584
Multiples of: 1

            Sipmos      
DMN63D8L-7


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated 2851
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AUD 0.0444
Multiples of: 10

350 mA30 V2.8 OhmsN - Channel 800 mV- 55 C+ 150 C520 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.9 nCEnhancement  
SI7106DN-T1-E3


MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
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Vishay 586
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AUD 1.3241
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8Reel      Trenchfet/Powerpak
IPG20N06S2L65ATMA1


Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
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Infineon 97
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AUD 0.6956
Multiples of: 1

                   
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