MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH6010SK3-13


MOSFET MOSFET BVDSS: 41V-60
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Diodes Incorporated 3351
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AUD 0.7333
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           ReelSi      
ES5N10A


100V 5A 85m@10V,5.0A 5W 1.7V@250uA 1PCSNChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 3350
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AUD 0.0648
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BSC066N06NS


Infineon Technologies MOSFET
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Infineon 3349
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AUD 0.8102
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64 A60 V6.6 mOhmsN - Channel+/- 20 V2.8 V- 55 C+ 150 C46 WSmd/SmtTDSON - 8Reel-1 Channel10 V17 nCEnhancement Optimos
IPTC012N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 3349
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AUD 7.3381
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396 A80 V1.2 mOhmsN - Channel 3.8 V- 55 C+ 175 C375 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V175 nCEnhancement  
RQ7E055ATTCR


MOSFET Pch -30V -5.5A Si MOSFET
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ROHM 3348
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AUD 0.7495
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5.5 A30 V19.3 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.5 WSmd/SmtT SMT - 8Cut TapeSi1 Channel20 V18.8 nCEnhancement  
HKTG48N10


100V 79A null PDFN-8(5x6) MOSFETs ROHS
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Hottech 3347
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AUD 0.4422
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TPDMP2160UW


20V 2.3A 100mΩ@4.5V,2.3A 290mW 700mV@250uA 82pF@8V P Channel 640pF@8V +125℃@(Tj) SOT-323 MOSFETs ROHS
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TECH PUBLIC 3346
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AUD 0.0501
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VBE1405


MOSFET N Trench 40V 85A 2.5V @ 250uA 7.5 mΩ @ 20A,4.5V TO-252 RoHS
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VBsemi Elec 3346
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AUD 0.6403
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MOT5N50D


500V 5A 50W 1.2@10V,2.5A 4V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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MOT 3344
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AUD 0.1635
Multiples of: 5

                   
TC6320TG-G


Dual MOSFET - N and P Channel - 200 V - 7 ohm - 10 V - 2 V.
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Microchip 3104
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AUD 2.5595
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2 A200 V8 Ohms , 7 OhmsN And P - Channel 1 V- 55 C+ 150 C Smd/SmtSOIC - 8ReelSi2 Channel10 V Enhancement  
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