MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2053U-7


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K
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Diodes Incorporated 3116
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AUD 0.1067
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6.5 A20 V29 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V4.6 nCEnhancement  
TC6320K6-G


N and P channel enhancement mode MOSFET pair - 200V – DFN 8 - 37,400 mg - Low threshold - ...
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Microchip 3113
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AUD 1.2869
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1 A200 V7 Ohms , 8 OhmsN And P - Channel 1 V- 55 C+ 150 C Smd/SmtDFN - 8ReelSi2 Channel10 v , - 10 V Enhancement  
IRLB3813PBF


MOSFET N Trench 30V 260A 2.35V @ 150uA 1.95 mΩ @ 60A,10V TO-220 (TO-220-3) RoHS
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Infineon 3112
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AUD 1.0951
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260 A30 V1.95 mOhmsN - Channel 1.9 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V57 nC   
NVJD5121NT1G


ON Semiconductor MOSFET NFET SC88 60V 295MA 1.6OH
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ON Semiconductor 3110
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AUD 0.1143
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300 mA60 V1 OhmsN - Channel 1 V- 55 C+ 175 C300 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V900 pCEnhancementAec - Q101 
DMN10H120SE-13


MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC
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Diodes Incorporated 3110
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AUD 0.2224
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3.6 A100 V110 mOhmsN - Channel 1.5 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V10 nCEnhancement  
Hot IRFP150NPBF


Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
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Infineon 3110
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AUD 0.864
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39 A100 V36 mOhmsN - Channel    140 WThrough HoleTO - 247ACTubeSi1 Channel20 V73.3 nC   
NTD20N06T4G


MOSFET 60V 20A N-Channel
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ON Semiconductor 3110
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AUD 1.1739
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20 A60 V37.5 mOhmsN - Channel  - 55 C+ 175 C60 WSmd/SmtDPAKReelSi1 Channel20 V Enhancement  
RD3N07BBHTL1


MOSFETs TO252 N-CH 80V 105A
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ROHM 3109
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AUD 2.1015
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105 A80 V4.4 mOhmsN - Channel 4 V- 55 C+ 150 C89 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V46 nCEnhancement  
AOD4184A-JSM


TO-252 MOSFETs ROHS
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JSMSEMI 3108
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AUD 0.211
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BSS126IXTSA1


N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount PG-SOT23-3-5
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Infineon 3010
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AUD 0.0772
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          TO - 236 - 3 , SC - 59 , SOT - 23 - 3Tape And ReelMosfet (Metal Oxide)      
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