MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
4N65KG-TC-TN3-R


TO-252 MOSFETs ROHS
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Unisonic 3395
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AUD 0.2465
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RQ3L270BLFRATCB


MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3395
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AUD 0.9465
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27 A60 V14.7 mOhmsN - Channel 4 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
RQ3P270BKFRATCB


MOSFETs Nch 100V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3395
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AUD 0.9465
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27 A100 V27 mOhmsN - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V13.6 nCEnhancement  
IPP60R520C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3
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Infineon 3395
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AUD 1.25
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            coolmos c6      
IAUC100N10S5N040ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 3395
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AUD 2.1982
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100 A100 V5.6 mOhmsN - Channel 2.2 V- 55 C+ 175 C167 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V78 nCEnhancement  
NVMFS5C404NLWFHT3G


MOSFETs T6 40V HEFET
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ON Semiconductor 3395
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AUD 2.2873
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370 A40 V670 uOhmsN - Channel 2 V- 55 C+ 175 C200 WSMD/SMTDFNW - 5Reel , Cut TapeSi1 Channel20 V181 nCEnhancement  
IPT65R105G7XTMA1


MOSFET HIGH POWER_NEW
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Infineon 3394
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AUD 2.2081
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24 A650 V105 mOhmsN - Channel 3 V- 55 C+ 150 C156 WSmd/SmtHSOF - 8Cut TapeSi1 Channel20 V35 nCEnhancement Coolmos
AO4447A


30V 10.9A 11mO@10V,10A 2.7W P Channel SOP-8 MOSFETs ROHS
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VBsemi Elec 3390
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AUD 0.491
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IAUCN10S7N040ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 3390
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AUD 1.7146
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130 A100 V4 mOhmsN - Channel 3.2 V- 55 C+ 175 C142 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V39.3 nCEnhancement  
DMNH6012SPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3388
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AUD 1.1663
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         Smd/SmtPowerdi5060 - 8Cut TapeSi    Aec - Q101 
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