MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO4435


SOP-8 MOSFETs ROHS
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JSMSEMI 14399
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AUD 0.0905
Multiples of: 5

                   
RTR025N03HZGTL


MOSFET NCH 30V 2.5A SMALL SIGNAL MOSF
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ROHM 3162
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AUD 0.2944
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2.5 A30 V92 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V3.3 nCEnhancementAec - Q101 
FDB2710


Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
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ON Semiconductor 3162
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AUD 4.2358
Multiples of: 1

                   
DMNH6012SPSQ-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3161
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AUD 1.0967
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         Smd/SmtPowerdi5060 - 8Cut TapeSi    Aec - Q101 
ZVN4206A


N-Channel 60 V 600mA (Ta) 700mW (Ta) Through Hole TO-92
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Diodes Incorporated 3158
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AUD 0.4394
Multiples of: 296

600 mA60 V1 OhmsN - Channel 1.3 V- 55 C+ 150 C700 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
IRF4905STRLPBF-ES


60V 25A 30W 22m@10V,10A 1.6V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS
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ElecSuper 3157
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AUD 0.5108
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IPD200N15N3GATMA1


Infineon Technologies MOSFET
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Infineon 3157
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AUD 1.5022
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50 A150 V20 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel10 V23 nCEnhancement Optimos
SI3430DV-T1-E3


MOSFET 100V 8A 2W
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Vishay 3156
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AUD 0.7388
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
STW15N95K5


Transistor: N-MOSFET; unipolar; 950V; 7.6A; 170W; TO247
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STMicroelectronics 3156
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AUD 3.8231
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            Mdmesh      
SQ2303CES-T1_GE3


MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 3154
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AUD 0.1379
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2.5 A30 V170 mOhmsP - Channel 2.5 V- 55 C+ 175 C1.9 WSMD/SMTSOT - 23 - 3 Si1 Channel+ 20 V4.5 nCEnhancement  
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