MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ6C065BCTCR


MOSFET Pch -20V -6.5A Si MOSFET
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ROHM 3063
Ships to you
between Tue. 21 Jul to Thu. 23 Jul
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AUD 0.4466

Multiples of: 1

6.5 A20 V14.9 mOhmsP - Channel 1.2 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel8 V22 nCEnhancement  
VP2106N3-G


Transistor: P-MOSFET; unipolar; -60V; -0.5A; 1W; TO92
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Microchip 3063
Ships to you
between Wed. 15 Jul to Tue. 21 Jul
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AUD 0.8828

Multiples of: 1

250 mA60 V15 OhmsP - Channel 1.5 V- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel- 5 V Enhancement  
BSB014N04LX3GXUMA1


MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
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Infineon 3061
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between Wed. 15 Jul to Tue. 21 Jul
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AUD 1.605

Multiples of: 1

           Reel      optimos
FDMD85100


Fairchild Semiconductor MOSFET
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ON Semiconductor 3056
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between Tue. 21 Jul to Thu. 23 Jul
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AUD 2.5284

Multiples of: 1

48 A , 48 A100 v , 100 V18.7 mOhms , 18.6 mOhmsn - channel 2 v , 2 V- 55 C+ 150 C50 w , 50 Wsmd/smtPOWER - 56 - 8Reelsi2 channel20 v , 20 V22 nC , 21 nCenhancement powertrench power clip
DMN2400UFB4-7B


Trans MOSFET N-CH 20V 0.75A Automotive 3-Pin DFN-H4 T/R
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Diodes Incorporated 3055
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between Wed. 29 Jul to Mon. 03 Aug
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AUD 0.0417

Multiples of: 10

0.75 A  N     Surface Mount Tape And Reel    Enhancement  
IRFH8307TRPBF


Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
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Infineon 3055
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between Wed. 15 Jul to Tue. 21 Jul
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AUD 1.1009

Multiples of: 1

100 A30 V1.3 mOhmsN - Channel20 V2.35 V  156 WSmd/SmtPQFN - 8 5X6ReelSi1 Channel20 V50 nC   
BSP296NH6433XTMA1


MOSFET SMALL SIGNAL N-CH
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Infineon 3052
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between Tue. 21 Jul to Thu. 23 Jul
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AUD 0.4121

Multiples of: 1

1.2 A100 V329 mOhmsN - Channel 800 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel20 V6.7 nCEnhancement  
IPD15N06S2L64ATMA2


MOSFET N-CHANNEL_55/60V
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Infineon 3052
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between Tue. 21 Jul to Thu. 23 Jul
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AUD 0.4728

Multiples of: 1

19 A55 V47 mOhmsN - Channel 1.2 V- 55 C+ 175 C47 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V13 nCEnhancementAec - Q101 
MSK7804


30V 30A 1.5W 10mΩ@10V,8A 2.5V@250uA 109pF@15V 2 N-Channel 940pF@15V 9.63nC@4.5V -55℃~+150℃@(Tj) DFN3X3-8L MOSFETs ROHS
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MSKSEMI 3050
Ships to you
between Wed. 29 Jul to Mon. 03 Aug
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AUD 0.3159

Multiples of: 5

                   
NCEP40ND80G


DFN-8(5x5.7) MOSFETs ROHS
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NCE Power 1287
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between Wed. 29 Jul to Mon. 03 Aug
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AUD 0.9635

Multiples of: 1

                   
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