MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3403


MOSFET P Trench 30V 2.6A 1.4V @ 250uA 115 mΩ @ 2.6A,10V SOT-23-3L RoHS
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Alpha & Omega 60911
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AUD 0.0857
Multiples of: 5

                   
TPM7R10CQ5,LQ


MOSFETs N-ch MOSFET, 150 V, 0.0071 ohma.10V, Qrr=43nCa.100A/ s, SOP Advance(E), U-MOS?-H
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Toshiba 3388
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AUD 2.1651
Multiples of: 1

120 A150 V7.1 mOhmsN - Channel 4.5 V + 150 C250 WSMD/SMTSOP - 8Reel , Cut TapeSi1 Channel20 V57 nCEnhancement  
BSP92P H6327


Infineon Technologies MOSFET P-Ch -250V -260mA SOT-223-4
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Infineon 3387
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AUD 0.2881
Multiples of: 1

260 mA250 V7.5 OhmsP - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4ReelSi1 Channel20 V- 5.4 nCEnhancement  
IRFD020PBF


MOSFET 60V N-CH HEXFET MOSFET HEXDI
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Vishay 3387
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AUD 1.2449
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   N - Channel  - 55 C+ 150 C Through HoleHD - 1TubeSi      
ISA150233C03LMDSXTMA1


MOSFETs OptiMOS Dual power MOSFET 30V
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Infineon 3386
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AUD 0.44
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8.8 A , 10.2 A30 V15 mOhms , 23.3 mOhmsN - Channel, P - Channel 2.7 V- 55 C+ 150 C2.5 WSMD/SMTDSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V12 nC , 14 nCEnhancement OptiMOS
2301


20V 3A 60m@4.5V,3A 1.25W 1V@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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MOT 3385
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AUD 0.0147
Multiples of: 50

                   
MCACLF320N04Y-TP


MOSFETs N-CHANNEL MOSFET,LFPAK56E
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Micro Commercial Components (MCC) 3385
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AUD 1.6919
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320 A40 V620 uOhmsN - Channel 4 V- 55 C+ 175 C230 WSMD/SMTLFPAK56E - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V80 nCEnhancement  
3N10-MS


100V 3A 105mΩ@VGS10V N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 3384
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AUD 0.0655
Multiples of: 10

                   
BSS123LT1G-HXY


100V 170mA 6Ω@10V 350mW 2.5V null SOT-23 MOSFETs ROHS
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HXY MOS 3383
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AUD 0.0204
Multiples of: 20

                   
IPB180N04S400ATMA1


Infineon Technologies MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2
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Infineon 3383
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AUD 2.9159
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180 A40 V800 uOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel20 V286 nCEnhancementAec - Q101 
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