MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RQ3L270BKFRATCB


MOSFETs Nch 60V 27A, HSMT8AG, Power MOSFET for Automotive
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ROHM 3371
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.9465

Multiples of: 1

27 A60 V14.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C69 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel- 20 V , + 20 V15 nCEnhancement  
15N10


TO-252 MOSFETs ROHS
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TECH PUBLIC 3370
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.1664

Multiples of: 5

                   
AP4008QD


40V 20A 17mΩ@10V,10A 21W 2 N-Channel DFN-8(3.2x3.2) MOSFETs ROHS
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Quan Li 3370
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.2211

Multiples of: 5

                   
RF9G120BKFRATCR


MOSFETs Nch 40V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101
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ROHM 3370
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.7006

Multiples of: 1

12 A40 V17.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C23 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel- 20 V , + 20 V8.5 nCEnhancement  
IRF6613TRPBF


Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
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Infineon 3370
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 1.5854

Multiples of: 1

23 A40 V4.1 mOhmsN - Channel20 V   89 W DirectfetReel   42 nC  Directfet
SQJ974EP-T1_BE3


MOSFETs DUAL N-CHANNEL 100-V (D-S) 175C MOSFET
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Vishay 3369
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.8529

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           Reel , Cut TapeSi      
VN2460N3-G-P014


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 3369
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 1.9532

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160 mA600 V25 OhmsN - Channel20 V - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Bulk 1 Channel20 V Enhancement  
IPTG025N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 3368
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 9.3937

Multiples of: 1

264 A150 V2.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C395 WSMD/SMTHSOG - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V105 nCEnhancement  
AO4805


30V 9A 15m@9.0A,10V 2.5W 1.5V@250uA 2 P-Channel SOP-8 MOSFETs ROHS
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ElecSuper 3366
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.2803

Multiples of: 1

                   
RAF040P01TCL


ROHM Semiconductor MOSFET MOSFET P-CH 1.5V 4A
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ROHM 82
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.2501

Multiples of: 5

4 A12 V22 mOhmsP - Channel 1 V- 55 C+ 150 C800 mWSmd/SmtSOT - 323T - 3ReelSi1 Channel- 8 V37 nCEnhancement  
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