MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AS2300


MOSFET N Trench 20V 4.2A 1.2V @ 250uA 30 mΩ @ 4.2A,4.5V SOT-23 (SOT-23-3) RoHS
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AnBon 3365
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.0386

Multiples of: 10

                   
FDN306P-NL-VB


20V 5A P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 3365
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.0656

Multiples of: 5

                   
SI2309CDS-T1-GE3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3365
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.0666

Multiples of: 10

                   
IAUCN08S7N024ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 3365
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 1.5575

Multiples of: 1

165 A80 V2.4 mOhmsN - Channel 3.2 V- 55 C+ 175 C148 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V51.5 nCEnhancementAEC - Q101OptiMOS
IRF7471TRPBF-TP


40V 15A 1.5W 13m@10V,8A 1.6V@250uA SOP-8 MOSFETs ROHS
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TECH PUBLIC 3361
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.2383

Multiples of: 5

                   
RQ1A060ZPTR


MOSFET SW MOSFET MID PWR P-CH 12V -6A
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ROHM 3361
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.5116

Multiples of: 1

6 A- 12 V16 mOhmsP - Channel10 V - 55 C+ 150 C1.5 WSmd/SmtT SMT - 8ReelSi1 Channel10 V34 nCEnhancement  
WSP08N15


SOP-8 MOSFETs ROHS
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Winsok 3357
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.5406

Multiples of: 1

                   
BSP296N H6327


Infineon Technologies MOSFET N-Ch 100V 1.1A SOT-223-3
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Infineon 3356
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 0.3769

Multiples of: 1

1.2 A100 V329 mOhmsN - Channel 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V4.5 nCEnhancement  
AO4805&19-VB


30V 8.3A 2 P-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 3356
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between Fri. 12 Dec to Wed. 17 Dec
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AUD 0.5234

Multiples of: 1

                   
SI7112DN-T1-E3


N-Channel 30 V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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Vishay 3352
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between Thu. 04 Dec to Mon. 08 Dec
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AUD 1.4876

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK 1212 - 8ReelSi     Trenchfet
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