MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF640NPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
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Infineon 136372
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AUD 0.2306
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18 A200 V150 mOhmsN - Channel  - 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44.7 nCEnhancement  
BSZ097N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 40A TSDSON-8
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Infineon 3424
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AUD 1.0249
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40 A100 V13 mOhmsN - Channel 2.2 V- 55 C+ 150 C69 WSmd/SmtTSDSON - 8ReelSi1 Channel+/- 20 V22 nCEnhancement Optimos
50N06


TO-252 MOSFETs ROHS
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TECH PUBLIC 3417
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AUD 0.1284
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RQ5L035GNTCL


MOSFET NCH 60V 3.5A SMALL SIGNAL
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ROHM 3415
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AUD 0.4352
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3.5 A60 V50 mOhmsN - Channel 1.3 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V7.3 nCEnhancement  
2N7002K


MOSFET N Trench 60V 300mA 1.9V @ 250uA 3 Ω @ 400mA,5V SOT-23 (SOT-23-3) RoHS
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NCE Power 3414
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AUD 0.0225
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SIDR626LDP-T1-RE3


MOSFET 60V N-CHANNEL MOSFET
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Vishay 3413
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AUD 2.3082
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204 A60 V1.2 mOhmsN - Channel 2.5 V- 55 C+ 155 C125 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V89 nCEnhancement TrenchFET
ZXMN2F30FHQTA


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 3209
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AUD 0.1833
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           Cut TapeSi    Aec - Q101 
SQJ459EP-T1_GE3


MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
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Vishay 2406
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AUD 0.8717
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- 52 A- 60 V0.0155 OhmsP - Channel - 2.5 V- 55 C+ 175 C83 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V108 nCEnhancement  
2N7002AQ-7


60V 180mA 5O@10V,115mA 370mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 2395
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AUD 0.0512
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180 mA60 V6 OhmsN - Channel 1.2 V- 55 C+ 150 C370 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V EnhancementAec - Q101 
TN2504N8-G


Transistor: N-MOSFET; unipolar; 40V; 4A; 1.6W; SOT89-3
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Microchip 2058
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AUD 1.6325
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890 mA40 V1 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Enhancement  
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