MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123M-TP


MOSFETs
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Micro Commercial Components (MCC) 9244
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AUD 0.0296
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IRLR2905ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 60A; 110W; DPAK
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Infineon 3407
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AUD 0.5618
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60 A55 V13.5 mOhmsN - Channel 3 V- 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel16 V23 nCEnhancement  
FDN352AP


SOT-23 MOSFETs ROHS
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Youtai 3399
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AUD 0.0334
Multiples of: 10

                   
IPD90N04S4-04


Infineon Technologies MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 3399
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AUD 0.6025
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90 A40 V4.1 mOhmsN - Channel 4 V- 55 C+ 175 C71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V33 nCEnhancementAec - Q101Optimos
ISC030N12NM6ATMA1


MOSFETs N
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Infineon 3396
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AUD 4.4862
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194 A120 V3.7 mOhmsN - Channel 3.6 V- 55 C+ 175 C250 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V59 nCEnhancement OptiMOS
FDV303N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 3395
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AUD 0.0314
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BSZ034N04LS


Infineon Technologies MOSFET
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Infineon 3302
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AUD 0.5878
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40 A40 V2.7 mOhmsN - Channel 1.2 V- 55 C+ 150 C52 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V35 nCEnhancement Optimos
CSD16413Q5A


N-Channel 25 V 24A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
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Texas Instruments 3281
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AUD 0.8307
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100 A25 V4.1 mOhmsN - channel 1.6 V- 55 C+ 150 C3.1 WSmd/smtQFN - 8ReelSi1 Channel16 V9 nCEnhancement Nexfet
BSC035N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 92A; 69W; PG-TDSON-8
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Infineon 1424
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AUD 0.5566
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            Optimos 3      
DMN3732UFB4Q-7B


MOSFETs MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 0
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AUD 0.0607
Multiples of: 1

           Reel , Cut TapeSi      
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