MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC0901NSIXT


MOSFET OptiMOS Power MOSFET
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Infineon 3684
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AUD 0.951
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100 A30 V1.7 mOhmsN - Channel 1 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V41 nCEnhancement Optimos
DMTH10H025SK3-13


MOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
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Diodes Incorporated 3683
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AUD 0.4436
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46.3 A100 V23 mOhmsN - Channel 2 V- 55 C+ 175 C3.7 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V21.4 nCEnhancement  
RD3P03BBHTL1


MOSFETs MOSFET
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ROHM 3682
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AUD 1.2576
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35 A100 V23 mOhmsN - Channel 4 V- 55 C+ 150 C50 WSMD/SMTTO - 252 - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancement  
IPD60R600PFD7SAUMA1


MOSFET CONSUMER
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Infineon 3678
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AUD 0.5631
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4.7 A600 V1.978 OhmsN - Channel 4 V- 40 C+ 150 C26 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V6 nCEnhancement  
FDMC8327L


Fairchild Semiconductor MOSFET PT8 40V20V LL NCh PowerTrench MOSFET
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ON Semiconductor 3677
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AUD 0.559
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12 A40 V9.7 mOhmsN - Channel20 V - 55 C+ 150 C30 WSmd/SmtMLP - 8ReelSi 20 V9.7 nC , 18.5 nC  Powertrench
ZVN3310ASTZ


Diodes Incorporated MOSFET N-Chnl 100V
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Diodes Incorporated 3628
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AUD 0.5204
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200 mA100 V10 OhmsN - Channel  - 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel20 V Enhancement  
AO4614B


SOP-8 MOSFETs ROHS
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TECH PUBLIC 3433
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AUD 0.1477
Multiples of: 5

                   
AP60P20Q


20V 60A 5.8mΩ@4.5V,20A 80W P Channel DFN-8(3.3x3.3) MOSFETs ROHS
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Quan Li 2604
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AUD 0.3421
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AON7506


Transistor: N-MOSFET; unipolar; 30V; 9.4A; 8W; DFN8
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Alpha & Omega 2182
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AUD 0.1872
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RD3R05BBHTL1


MOSFETs RD3R05BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.
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ROHM 329
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AUD 2.6269
Multiples of: 1

50 A150 V35 mOhmsN - Channel 4 V- 55 C+ 150 C89 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V37 nCEnhancement  
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