MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC900N20NS3 G


Infineon Technologies MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
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Infineon 3423
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AUD 1.0393
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15.2 A200 V77 mOhmsN - Channel20 V2 V- 55 C+ 150 C62.5 WSmd/SmtTDSON - 8ReelSi1 Channel10 V9 nCEnhancement  
NTD14N03RT4G


MOSFET 25V 14A N-Channel
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ON Semiconductor 3418
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AUD 0.3842
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   N - Channel  - 55 C+ 150 C Smd/SmtDPAKReel       
RQ5L035GNTCL


MOSFET NCH 60V 3.5A SMALL SIGNAL
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ROHM 3415
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AUD 0.4352
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3.5 A60 V50 mOhmsN - Channel 1.3 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V7.3 nCEnhancement  
NTP2955G


MOSFET -60V -12A P-Channel
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ON Semiconductor 3413
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AUD 0.5352
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2.4 A60 V196 mOhmsP - Channel 2 V- 55 C+ 175 C62.5 WThrough HoleTO - 220 - 3TubeSi1 Channel- 10 V14 nCEnhancement  
SIDR626LDP-T1-RE3


MOSFET 60V N-CHANNEL MOSFET
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Vishay 3413
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AUD 2.3082
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204 A60 V1.2 mOhmsN - Channel 2.5 V- 55 C+ 155 C125 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V89 nCEnhancement TrenchFET
TNM03K100KX


100V 2A 240m 1PCSNChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 3404
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AUD 0.0723
Multiples of: 10

                   
PJA3460


60V 2.5A 55mΩ@10V,2A 1.25W 1.75V@250uA N Channel SOT-23 MOSFETs ROHS
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Panjit 3404
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AUD 0.1107
Multiples of: 5

                   
RU1C001ZPTL


MOSFET 1.2V Drive Pch MOSFET
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ROHM 3403
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AUD 0.046
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100 mA20 V2.5 OhmsP - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3Tape And ReelSi1 Channel10 V Enhancement  
Hot IRFB4127PBF


MOSFET N Trench 200V 76A (Tc) 5V @ 250uA 20 mΩ @ 44A,10V TO-220AB RoHS
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Infineon 3329
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AUD 0.9093
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
DMP4050SSD-13


MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A
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Diodes Incorporated 1578
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AUD 0.5239
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4 A40 V38 mOhmsP - Channel  - 55 C+ 150 C1.25 WSmd/SmtSOIC - 8ReelSi2 Channel20 V6.9 nC   
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