MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SH8J62TB1


MOSFET Pch+Pch -30V -4.5A MOSFET
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ROHM 4035
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between Tue. 02 Dec to Thu. 04 Dec
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AUD 0.8119

Multiples of: 1

4.5 A30 V60 mOhmsP - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
DMN4800LSSL-13


MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
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Diodes Incorporated 4032
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between Tue. 02 Dec to Thu. 04 Dec
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AUD 0.2759

Multiples of: 1

8 A30 V14 mOhmsN - Channel  - 55 C+ 150 C1.46 WSmd/SmtSO - 8ReelSi1 Channel20 V8.7 nCEnhancement  
IPD5N25S3-430


Infineon Technologies MOSFET N-Ch 250V 5A DPAK-2
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Infineon 4028
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between Tue. 02 Dec to Thu. 04 Dec
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AUD 0.9044

Multiples of: 1

5 A250 V430 mOhmsn - channel 3 V- 55 C+ 175 C41 Wsmd/smtPG - TO - 252 - 3Cut Tapesi1 channel10 V4.7 nCenhancementaec - q101 
IPD30N06S4L23ATMA2


60V 30A 23mO@10V,30A 36W N Channel TO-252 MOSFETs ROHS
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Infineon 4027
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between Tue. 02 Dec to Thu. 04 Dec
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AUD 0.5395

Multiples of: 1

   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
HSCC8233


MOSFET DoubleNChannelCommon Drain -20V 11A 1V @ 250uA 7.2mΩ @ 5.5A,4.5V DFN2*3 RoHS
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HUASHUO 4027
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between Wed. 10 Dec to Mon. 15 Dec
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AUD 0.2673

Multiples of: 5

                   
AOD4130


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 4023
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between Wed. 10 Dec to Mon. 15 Dec
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AUD 0.4139

Multiples of: 1

                   
DMP6050SPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 4022
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between Tue. 02 Dec to Thu. 04 Dec
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AUD 0.4592

Multiples of: 1

26 A60 V50 mOhmsP - Channel 3 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V30 nCEnhancement  
IPB144N12N3GATMA1


Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO263-3
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Infineon 4017
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between Tue. 02 Dec to Thu. 04 Dec
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AUD 1.7286

Multiples of: 1

            Optimos 3      
BSS123


100V 150mA 6Ω@10V,120mA 250mW 2.8V@1mA N Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 4015
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between Wed. 10 Dec to Mon. 15 Dec
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AUD 0.0124

Multiples of: 20

                   
DMN2024U-7


null 6.8A 25mO@6.5A,4.5V 800mW null SOT-23 MOSFETs ROHS
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Diodes Incorporated 4012
Ships to you
between Tue. 02 Dec to Thu. 04 Dec
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AUD 0.1467

Multiples of: 1

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