MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
MMBZ15VDLT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4636
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AUD 0.0387
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ASDM30N90KQ-R


30V 90A 3.6mΩ@10V,30A 65W 1.6V@250uA 253pF@15V N Channel 2.12nF@15V 40nC@10V -55℃~+175℃@(Tj) TO-252 MOSFETs ROHS
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Ascend 3430
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AUD 0.2037
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STD35NF06L


TO-252 MOSFETs ROHS
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Youtai 3427
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AUD 0.3022
Multiples of: 5

                   
SPD04P10PL G


MOSFET P-CH 100V 4.2A
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Infineon 3427
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AUD 0.4531
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4.2 A100 V850 mOhmsP - Channel  - 55 C+ 175 C38 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Sipmos
DMP2100UFU-7


MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W
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Diodes Incorporated 3406
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AUD 0.2627
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5.7 A20 V25 mOhms , 25 mOhmsP - Channel 1.4 V- 55 C+ 150 C1.9 WSmd/SmtU - DFN2030 - 6Cut TapeSi2 Channel10 V21.4 nC , 21.4 nCEnhancement  
HUF75329D3ST


MOSFET 20a 55V N-Channel UltraFET
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ON Semiconductor 3399
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AUD 0.6616
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20 A55 V26 mOhmsN - Channel  - 55 C+ 175 C128 WSmd/SmtTO - 252AAReelSi1 Channel20 V Enhancement  
DMG1023UV-7


MOSFET MOSFET P-CHANNEL
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Diodes Incorporated 2943
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AUD 0.1332
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1.03 A20 V500 mOhmsP - Channel  - 55 C+ 150 C530 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V622.4 pC   
IRFS4321TRLPBF


Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
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Infineon 2519
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AUD 2.1343
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85 A150 V12 mOhmsN - Channel 5 V- 55 C+ 175 C350 WSmd/SmtD2PAK - 3ReelSi1 Channel30 V110 nC   
Hot IRF6646TRPBF


Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
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Infineon 2474
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AUD 1.5616
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12 A80 V7.6 mOhmsN - Channel20 V - 40 C+ 150 C89 WSmd/SmtDirectfet - 3Reel   36 nCEnhancement Directfet
IPTC014N08NM5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 1500
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AUD 3.5955
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330 A80 V1.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C300 WSMD/SMTHDSOP - 16Cut Tape , ReelSi1 Channel- 20 V , + 20 V144 nCEnhancement  
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