MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD18501Q5A


N-Channel 40 V 22A (Ta), 100A (Tc) 3.1W (Ta), 150W (Tc) Surface Mount 8-VSONP (5x6)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Texas Instruments 133
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AUD 4.2074
Multiples of: 1

161 A40 V3.2 mOhmsN - channel 1.4 V- 55 C+ 150 C150 WSmd/smtSONReelSi1 Channel10 V42 nCEnhancement Nexfet
SIHG23N60E-GE3


Vishay Semiconductors MOSFET 650V 158mOhms10V 23A N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 4.1923
Multiples of: 1

23 A600 V158 mOhmsN - Channel 4 V- 55 C+ 150 C227 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V63 nCEnhancement E Series
SPP11N60S5XK


Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220
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Infineon 0
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AUD 4.1951
Multiples of: 500

                   
PSMNR90-40SSHJ


MOSFET 40V N-CHANNEL AMPS CONTX
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Nexperia 0
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AUD 4.1978
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           Cut Tape       
TK20G60W,RVQ(S


Transistor: N-MOSFET; unipolar; 600V; 20A; 165W; D2PAK
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Toshiba 0
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AUD 4.2
Multiples of: 1000

                   
STW36N55M5


Transistor: N-MOSFET; unipolar; 550V; 20.8A; 190W; TO247
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STMicroelectronics 0
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AUD 4.2082
Multiples of: 1

            mdmesh      
SUP40N25-60-E3


N-Channel 250 V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 4.0393
Multiples of: 1

40 A250 V60 mOhmsn - channel30 V2 V- 55 C+ 175 C3.75 Wthrough holeTO - 220 - 3Tubesi1 channel30 V140 nCenhancement  
IRFBC40


MOSFET RECOMMENDED ALT 844-IRFBC40PBF
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Vishay 0
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AUD 4.2097
Multiples of: 1

         through holeTO - 220 - 3Tubesi   enhancement  
IRF6635TR1PBF


Transistor: N-MOSFET; unipolar; 30V; 32A; 89W; DirectFET
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Infineon 0
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AUD 4.2108
Multiples of: 1000

32 A30 V2.4 mOhmsN - Channel20 V   89 WSmd/SmtDirectfet - 4Reel   47 nC   
IPB100N08S2L-07


Infineon Technologies MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 4.2115
Multiples of: 1

100 A75 V6.5 mOhmsn - channel 1.2 V- 55 C+ 175 C300 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V246 nCenhancementaec - q101optimos
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First...52765277527852795280...

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