MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK2225E


MOSFET N Trench 1500V 2A 12 Ω @ 1A,15V TO-3P RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Renesas 1081
Ships to you
between Thu. 01 Oct to Tue. 06 Oct Calender.png

AUD 5.4714
Multiples of: 1

2 A  N     Through Hole Box    Enhancement  
BSC430N25NSFDATMA1


MOSFET TRENCH >=100V
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.1847
Multiples of: 5000

36 A250 V43 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTSON - 8Cut TapeSi1 Channel20 V42 nCEnhancement Optimos 3
SiHH14N65EF-T1-GE3


MOSFET 650V Vds +/-30V Vgs Rds(on) @10V 0.271
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 4.1851
Multiples of: 1

15 A650 V271 mOhmsn - channel 2 V- 55 C+ 150 C156 Wsmd/smtPOWERPAK - 8Reelsi1 channel+/- 30 V49 nCenhancement trenchfet
NVMYS021N06CLTWG


MOSFET 40V 0.9Ohm 322A Single N-Channel
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 4.1888
Multiples of: 1

           Cut Tape       
AOT15S65L


N-Channel 650 V 15A (Tc) 208W (Tc) Through Hole TO-220
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Alpha & Omega 0
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AUD 4.1896
Multiples of: 1

           -       
TK14N65W5,S1F


N-Channel 650 V 13.7A (Ta) 130W (Tc) Through Hole TO-247
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Toshiba 0
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AUD 4.1902
Multiples of: 1

13.7 A650 V250 mOhmsn - channel 3 V- 55 C+ 150 C130 Wthrough holeTO - 247 - 3Tubesi1 channel30 V40 nCenhancement dtmosiv
NVATS5A304PLZT4G


MOSFET PCH4.5V DRIVE SERIES
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ON Semiconductor 0
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AUD 4.1918
Multiples of: 1

           Cut Tape       
STB18N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
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STMicroelectronics 0
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AUD 4.1918
Multiples of: 1

13 A600 V280 mOhmsN - Channel 3.25 V- 55 C+ 150 C110 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel25 V16.8 nCEnhancement Mdmesh
IPB80P03P4-05


Infineon Technologies MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 4.1918
Multiples of: 1

- 80 A- 30 V4.7 mOhmsp - channel  - 55 C+ 175 C137 Wsmd/smtD2PAK - 3Reelsi1 channel20 V100 nC aec - q101optimos
IPP100N08S207AKSA1


Transistor: N-MOSFET; unipolar; 80V; 94A; 300W; PG-TO220-3
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.1919
Multiples of: 160

            Optimos      
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