MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD320N20N3G


MOSFET N Channel 200V 34A(Tc) 4V @ 90uA 32mO @ 34A,10V TO-252 RoHS
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Infineon 1961
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AUD 2.8618
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AOK60N30L


MOSFET N-CH 300V 60A TO247
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Alpha & Omega 0
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AUD 4.1612
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IAUA250N04S6N007EAUMA1


MOSFETs MOSFET_(20V 40V)
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Infineon 0
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AUD 4.1619
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IPL65R095CFD7AUMA1


MOSFET
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Infineon 0
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AUD 4.1643
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29 A650 V95 mOhmsN - Channel 4.5 V- 40 C+ 150 C171 WSMD/SMTVSON - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V53 nCEnhancement  
MCTL300N10YB-TP


MOSFETs
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Micro Commercial Components (MCC) 0
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AUD 4.1643
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           Reel , Cut TapeSi      
SIHP35N60EF-GE3


MOSFET 600V Vds 30V Vgs TO-220AB
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Vishay 0
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AUD 4.1705
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32 A600 V97 mOhmsN - Channel 2 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3 Si1 Channel- 30 V , 30 V134 nCEnhancement  
RJ1P07CBHTL1


MOSFETs MOSFET NCH 100V 120A
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ROHM 0
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AUD 4.173
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120 A100 V7.1 mOhmsN - Channel 4 V + 150 C135 WSMD/SMTTO - 263AB - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V73 nCEnhancement  
FDMD8280


Fairchild Semiconductor MOSFET
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ON Semiconductor 0
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AUD 4.1744
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40 A80 V8.2 mOhmsn - channel20 V3 V- 55 C+ 150 C38 Wsmd/smtDFN - 12 EPReelsi2 channel20 V enhancement power clip
IXTP08N120P


MOSFET 0.8 Amps 1200V 25 Rds
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IXYS 0
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AUD 4.1753
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800 mA1.2 kV25 OhmsN - Channel  - 55 C+ 150 C50 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
STL260N4F7


MOSFET LGS LV MOSFET
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STMicroelectronics 0
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AUD 4.1753
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120 A40 V1.1 mOhmsN - Channel 4 V- 55 C+ 175 C188 WSMD/SMTPowerflat - 5X6 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V72 nCEnhancement  
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