MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD19536KTT


MOSFET 100-V, N channel NexFET power MOSFET, single D2PAK, 2.4 mOhm 3-DDPAK/TO-263 -55 to 175
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Texas Instruments 40
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between Thu. 01 Oct to Tue. 06 Oct
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AUD 5.1117

Multiples of: 1

272 A100 V2.4 mOhmsN - Channel 2.1 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3ReelSi1 Channel10 V118 nCEnhancement Nexfet
IR2181SPBF-EL


MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 4.2128

Multiples of: 95

                   
IRLS3036-7PPBF


MOSFET 60V 1 N-CH HEXFET PWR MOSFET 1.9mOhms
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Infineon 0
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AUD 4.2158

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300 A60 V2.2 mOhmsN - Channel16 V   380 WSmd/SmtD - PAK - 3TubeSi1 Channel16 V110 nC   
IPI023NE7N3 G


MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3
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Infineon 0
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AUD 4.2186

Multiples of: 159

120 A75 V2.3 mOhmsn - channel  - 55 C+ 175 C300 Wthrough holeTO - 262 - 3Tubesi1 channel20 V155 nC  optimos
IPB100N04S204ATMA4


MOSFET N-CHANNEL_30/40V
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Infineon 0
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AUD 4.2186

Multiples of: 159

   N - Channel     Smd/SmtTO - 263 - 3Cut TapeSi1 Channel   Aec - Q101 
AOB260L


MOSFET N CH 60V 140A TO263
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Alpha & Omega 0
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AUD 4.221

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           -       
STF26N60DM6


MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM6 Power MOSFET in TO-220FP package
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STMicroelectronics 0
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AUD 4.2215

Multiples of: 1

18 A600 V195 mOhmsN - Channel 3.25 V- 55 C+ 150 C30 WThrough HoleTO - 220FP - 3Tube 1 Channel25 V24 nCEnhancement  
IRFD9020


Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
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Infineon 0
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AUD 4.2252

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ISG0616N10NM5HSCATMA1


MOSFETs N
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Infineon 0
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AUD 4.2271

Multiples of: 1

139 A100 V4 mOhmsN - Channel 3.8 V- 55 C+ 175 C167 WSMD/SMTTFN - 10Reel , Cut TapeSi2 Channel- 20 V , + 20 V52 nCEnhancement  
MCTL160N15Y-TP


MOSFETs
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Micro Commercial Components (MCC) 0
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AUD 4.2271

Multiples of: 1

           Reel , Cut TapeSi      
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