MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP80NF06


Transistor: N-MOSFET; unipolar; 60V; 80A; 300W; TO220-3
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STMicroelectronics 60
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AUD 4.2895
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NTMYS2D1N04CLTWG


MOSFET T6 40V LL LFPAK
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ON Semiconductor 14
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AUD 1.3776
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SQD50N06-09L_GE3


N-Channel 60 V 50A (Tc) 136W (Tc) Surface Mount TO-252AA
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Vishay 0
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AUD 4.2857
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50 A60 V9 mOhmsN - Channel 1.5 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V48 nCEnhancementAec - Q101Trenchfet
IRF9Z34


IRF9Z34 HEXFET T/HOLE
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Vishay 0
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AUD 4.2876
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18 A- 60 V140 mOhmsp - channel20 V - 55 C+ 175 C88 Wthrough holeTO - 220 - 3Tube    enhancement  
KCM3560A


MOSFET N Trench 20V 60A 4V @ 250uA 56 mΩ @ 20A,10V TO-247 (AC) RoHS
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KIA 0
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AUD 4.2897
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IQD063N15NM5CGSCATMA1


MOSFETs TRENCH >=100V
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Infineon 0
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AUD 4.29
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151 A150 V6.32 mOhmsN - Channel 4.6 V- 55 C+ 175 C333 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V48 nCEnhancement OptiMOS
STD10LN80K5


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 4.2904
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WMM028N10HG2


Transistor: N-MOSFET; unipolar; TO263
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Wayon 0
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AUD 4.2918
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IXFA180N10T2TRL


MOSFET Trench T2 HiperFET Power MOSFET
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IXYS 0
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AUD 4.2947
Multiples of: 3

180 A100 V6 mOhmsn - channel     smd/smtTO - 263 - 3Tubesi     hiperfet
IPB240N03S4LR8ATMA1


MOSFET MOSFET_20V 40V
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.2952
Multiples of: 1

   N - Channel     Smd/SmtTO - 263 - 7Cut TapeSi1 Channel   Aec - Q101 
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