MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN1R5-25MLHX


MOSFET 25V N-CHANNEL LOGIC LEVEL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 9
Ships to you
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AUD 4.3024
Multiples of: 1

150 A25 V1.81 mOhmsN - Channel 2.2 V- 55 C+ 175 C106 WSMD/SMTLFPAK - 33 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V17 nCEnhancement  
FCA16N60N


MOSFET SupreMOS 16A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 4.2985
Multiples of: 450

16 A600 V170 mOhmsn - channel  - 55 C+ 150 C134.4 Wthrough holeTO - 3PNTubesi1 channel30 V enhancement supremos
TK099V65Z,LQ


MOSFET 230W 1MHz 8x8DFN
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Toshiba 0
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AUD 4.3029
Multiples of: 1

30 A650 V99 mOhmsN - Channel 4 V- 55 C+ 150 C230 WSMD/SMTDFN8X8 - 5Reel , Cut TapeSi1 Channel- 30 V , 30 V47 nCEnhancement DTMOSVI
FDMS8350L


MOSFET PT8 40V/20V Nch PowerTrench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 4.3035
Multiples of: 3000

200 A40 V1.2 mOhmsn - channel20 V1.5 V- 55 C+ 150 C113 Wsmd/smtPOWER - 56 - 8Reelsi1 channel20 V173 nCenhancement powertrench power clip
IXKP24N60C5M


MOSFET 24 Amps 600V
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IXYS 0
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AUD 4.3045
Multiples of: 1

            CoolMOSâ„¢      
SIHA22N60EL-GE3


MOSFET N-CHANNEL600V
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Vishay 0
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AUD 4.3048
Multiples of: 1

21 A600 V197 mOhmsN - Channel 5 V- 55 C+ 150 C35 WThrough HoleTO - 220FP - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V37 nCEnhancement  
NTMT190N65S3H


MOSFET SF3 FAST 190MOHM PQFN88
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 4.3057
Multiples of: 1

16 A650 V190 mOhmsN - Channel 4 V- 55 C+ 150 C129 WSMD/SMTTDFN - 4Reel , Cut TapeSi1 Channel- 30 V , 30 V31 nCEnhancement  
IPW60R105CFD7XKSA1


N-Channel 600 V 21A (Tc) 106W (Tc) Through Hole PG-TO247-3-41
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Infineon 0
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AUD 4.306
Multiples of: 1

21 A600 V105 mOhmsN - Channel 3.5 V- 55 C+ 150 C106 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V42 nCEnhancement  
IPDD60R102G7XTMA1


Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 23A; Idm:66A
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Infineon 0
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AUD 4.3063
Multiples of: 1

            Coolmos G7      
STFU25N60M2-EP


MOSFET N-channel 600 V 0.175 Ohm typ. 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package
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STMicroelectronics 0
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AUD 4.3068
Multiples of: 1

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