MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQA28N50


Fairchild Semiconductor MOSFET 500V N-Channel QFET
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ON Semiconductor 135
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between Thu. 01 Oct to Tue. 06 Oct
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AUD 5.0085

Multiples of: 1

28.4 A500 V160 mOhmsn - channel  - 55 C+ 150 C310 Wthrough holeTO - 3P - 3Tubesi1 channel30 V enhancement  
STF43N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 9
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between Thu. 01 Oct to Tue. 06 Oct
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AUD 13.6709

Multiples of: 1

34 A650 V93 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3 Si1 Channel+/- 25 V56 nCEnhancement  
IRFHM8363TRPBF


Mosfet Array 2 N-Channel (Dual) 30V 11A 2.7W Surface Mount 8-PQFN (3.3x3.3), Power33
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Infineon 3
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between Thu. 01 Oct to Tue. 06 Oct
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AUD 4.2554

Multiples of: 1

11 A30 V16.3 mOhmsN - Channel20 V1.8 V- 55 C+ 150 C2.7 WSmd/SmtDPQFN - 8ReelSi2 Channel20 V15 nC   
IRF6691TR1PBF


MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
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Infineon 0
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AUD 4.2528

Multiples of: 1

32 A20 V2.5 mOhmsn - channel12 V   2 Wsmd/smtDirectfet - 4Reel   47 nC   
ASW65R072EFDA


650V 54A 172W 60m 4V TO-247 MOSFETs ROHS
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ANHI 0
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AUD 4.2563

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AUIRF2804STRL7P


MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
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Infineon 0
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AUD 4.2575

Multiples of: 1

320 A40 V1.6 mOhmsN - Channel 4 V- 55 C+ 175 C330 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V170 nCEnhancementAec - Q101 
2SK1151L-E


Trans MOSFET N-CH 450V 1.5A 3-Pin(3+Tab) DPAK(L)-(1) Box
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Renesas 0
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AUD 4.2663

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1.5 A  n    20 Wthrough hole Box    enhancement  
PSMN2R0-100SSFJ


MOSFETs MOS DISCRETES
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Nexperia 0
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AUD 4.2687

Multiples of: 1

267 A100 V2.07 mOhmsN - Channel 4 V- 55 C+ 175 C341 WSMD/SMTSOT - 1235 - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V161 nCEnhancement  
NP83P06PDG-E1-AY


Trans MOSFET P-CH 60V 83A Automotive 3-Pin(2+Tab) D2PAK T/R
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Renesas 0
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AUD 4.269

Multiples of: 800

83 A  p    1.8 Wsurface mount Tape And Reel    enhancement  
IRFD9110


Trans MOSFET P-CH 100V 1A 4-Pin HVMDIP
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.2708

Multiples of: 1

                   
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