MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL260N4F7


MOSFET LGS LV MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 4.1753

Multiples of: 1

120 A40 V1.1 mOhmsN - Channel 4 V- 55 C+ 175 C188 WSMD/SMTPowerflat - 5X6 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V72 nCEnhancement  
IRFSL33N15DPBF


N CH MOSFET, 150V, 33A, TO-262
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Infineon 0
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AUD 4.1769

Multiples of: 1

   N Channel               
BUK964R2-55B,118


MOSFET, AEC-Q101, N-CH, 55V, TO-263
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 0
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AUD 4.1769

Multiples of: 1

   N Channel               
STP25N80K5


STMicroelectronics MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
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STMicroelectronics 0
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AUD 4.177

Multiples of: 1

19.5 A800 V260 mOhmsN - Channel 4 V- 55 C+ 150 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V40 nCEnhancement MDmesh
E3M0120090D


MOSFET 900V 120mOhms G3 SiC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed 0
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AUD 4.178

Multiples of: 1

23 A900 V155 mOhmsN - Channel 1.7 V- 55 C+ 150 C97 WThrough HoleTO - 247 - 3TubeSic1 Channel18 v , - 8 V17.3 nCEnhancement  
BSC050N10NS5


MOSFETs TRENCH >=100V
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.1781

Multiples of: 1

                   
IXTH36P10


MOSFET -36 Amps -100V 0.075 Rds
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IXYS 0
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AUD 4.1791

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36 A100 V75 mOhmsP - Channel  - 55 C+ 150 C180 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V Enhancement  
IPDQ65R099CFD7AXTMA1


MOSFETs Y
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Infineon 0
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AUD 4.18

Multiples of: 750

29 A650 V194 mOhms  4 V- 40 C+ 150 C186 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V39 nC   
FDP025N06


N-Channel 60 V 120A (Tc) 395W (Tc) Through Hole TO-220-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 4.18

Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
TK125V65Z,LQ


N-Channel 650V 24A (Ta) 190W (Tc) Surface Mount 5-DFN (8x8)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 4.1829

Multiples of: 1

24 A650 V125 mOhmsN - Channel 4 V- 55 C+ 150 C190 WSMD/SMTDFN - 8Reel , Cut TapeSi1 Channel- 30 V , + 30 V40 nCEnhancement  
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