MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS86255ET150


Fairchild Semiconductor MOSFET
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ON Semiconductor 1
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AUD 11.4341
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45 A150 V9.5 mOhmsN - Channel 2 V- 55 C+ 150 C113 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V45 nCEnhancement Powertrench Power Clip
STP40N60M2


Transistor: N-MOSFET; unipolar; 600V; 22A; 250W; TO220-3
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STMicroelectronics 1
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AUD 11.6233
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            supermesh      
IRFP450LCPBF


MOSFET N Trench 500V 14A 4V @ 250uA 8.4A,10V TO-247 (AC) RoHS
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Infineon 1
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AUD 11.8768
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STB47N60DM6AG


MOSFET Automotive-grade N-channel 600 V, 0.070 typ., 36 A MDmesh DM6 Power MOSFET in a D PAK package
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STMicroelectronics 1
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AUD 12.2558
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36 A600 V80 mOhmsN - Channel 3 V- 55 C+ 150 C250 WSMD/SMTD2PAK - 3 (TO - 263 - 3)Reel , Cut TapeSi1 Channel- 25 V , 25 V55 nCEnhancementAEC - Q101MDmesh
AUIRFS8407-7P


Transistor: N-MOSFET; unipolar; 40V; 216A; 231W; D2PAK-7
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Infineon 1
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AUD 12.5655
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240 A40 V1.3 mOhmsN - Channel20 V2.2 V To 3.9 V- 55 C+ 175 C230 WSmd/SmtD2PAK - 7TubeSi1 Channel20 V150 nCEnhancementAec - Q101Coolirfet
FDBL86210_F085


MOSFET N-Ch Power Trench MOSFET 150V 169A
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ON Semiconductor 1
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AUD 12.5655
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169 A150 V5 mOhmsn - channel20 V2.8 V- 55 C+ 175 C500 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V70 nC  powertrench
VBP2205N


-200V -55A 50m@10V 4V 1PCSPChannel TO-247AC MOSFETs ROHS
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VBsemi Elec 1
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AUD 12.8764
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IXFH34N60X2A


Transistor: N-MOSFET; 600V; 34A; 540W; TO247-3; 164ns
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IXYS 1
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AUD 13.0597
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IXTQ120N20P


MOSFET 120 Amps 200V 0.022 Rds
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IXYS 1
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AUD 13.4358
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120 A200 V22 mOhmsn - channel 5 V- 55 C+ 175 C714 Wthrough holeTO - 3P - 3Tubesi1 channel20 V152 nCenhancement polarht
AUIRF7759L2TR


MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
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Infineon 1
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AUD 13.9806
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   N Channel      Directfet - 8Reel       
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