MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9520PBF


P-Channel 100 V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB
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Vishay 1649
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AUD 0.7996
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6.8 A100 V600 mOhmsP - Channel 2 V- 55 C+ 175 C60 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V18 nCEnhancement  
IPA60R060P7-VB


600V 43A 60m@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 5.3053
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AOTF160A60L


600V 24A 160m@12A,10V 34.7W 3.6V@250uA 1 N-Channel TO-220F MOSFETs ROHS
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Alpha & Omega 1
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AUD 5.7159
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BSC159N10LSF G


Trans MOSFET N-CH 100V 9.4A 8-Pin TDSON EP
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Infineon 1
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AUD 5.8967
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IPW60R120P7


Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO247-3
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Infineon 1
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AUD 5.8975
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            Coolmos P7      
IRF9530STRLPBF


P-Channel 100 V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 1
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AUD 5.9487
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   P - Channel  - 55 C+ 175 C Smd/SmtD2PAK - 2Reel       
IXTH270N04T4


MOSFET 40V/270A TrenchT4 Power MOSFET
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IXYS 1
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AUD 6.0179
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270 A40 V2.4 mOhmsN - Channel 2 V- 55 C+ 175 C375 WThrough HoleTO - 247 - 3TubeSi1 Channel15 V182 nCEnhancement Hiperfet
IPD60R210CFD7ATMA1


MOSFET LOW POWER_NEW
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Infineon 1
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AUD 6.1046
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12 A600 V210 mOhmsN - Channel 3.5 V- 55 C+ 150 C64 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V23 nCEnhancement  
IPA65R190CFDXKSA1


Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
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Infineon 1
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AUD 6.1149
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   N Channel               
NTTFS2D1N04HLTWG


MOSFET T8 40V DFN POWER CLIP 3 X 3
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ON Semiconductor 1
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AUD 6.24
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150 A40 V2.1 mOhmsN - Channel 2 V- 55 C+ 150 C83 WSMD/SMTWDFN - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V43.6 nCEnhancement  
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