MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB120P04P4L03ATMA1


Infineon Technologies MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2
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Infineon 146
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AUD 5.1774
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120 A40 V2.6 mOhmsP - Channel 2.2 V- 55 C+ 175 C136 WSmd/SmtTO - 263 - 3ReelSi1 Channel16 V234 nCEnhancementAec - Q101 
IPB011N04NF2S


TO-263-3 MOSFETs ROHS
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Infineon 1
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AUD 4.4214
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STW25N80K5-VB


800V 20A 205m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 4.4216
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IPP80R360P7XKSA1


Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3
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Infineon 1
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AUD 4.4299
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            Coolmos P7      
IPB60R120P7-VB


600V 4.3A 120mΩ@10V 4.5V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 1
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AUD 4.4558
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AOD380A60C


600V 11A 125W 380m@5.5A,10V 3.8V@250uA 1 N-Channel TO-252(DPAK) MOSFETs ROHS
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Alpha & Omega 1
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AUD 4.4784
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30NM90L-T47-T


TO-247 MOSFETs ROHS
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Unisonic 1
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AUD 4.559
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IPW90R1K0C3


MOSFET N-Ch 900V 5.7A TO247-3 CoolMOS C3
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Infineon 1
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AUD 4.7405
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5.7 A900 V1 OhmsN - Channel  - 55 C+ 150 C89 WThrough HoleTO - 247TubeSi1 Channel20 V Enhancement Coolmos
STW40N60M2-VB


600V 32A 85m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 4.775
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STB30N65M2AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 1
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AUD 4.9279
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20 A650 V180 mOhmsN - Channel 4 V- 55 C+ 150 C190 WSMD/SMTD2PAK - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V30.8 nCEnhancementAEC - Q101MDmesh
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