MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IQE006NE2LM5CGATMA1


N-Channel 25V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) Through Hole IPAK (TO-251AA)
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Infineon 209
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AUD 3.396
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          TO - 251 - 3 SHORT LEADS , IPAK , TO - 251AADigi - Reel®Mosfet (Metal Oxide)      
SIJ4108DP-T1-GE3


MOSFETs N-Channel 100 V (D-S) MOSFET PowerPAK SO-8L, 9 mohm a. 10V 8.5 mohm a. 7.5V
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Vishay 1
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AUD 3.8082
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56.7 A100 V9 mOhmsN - Channel 4 V- 55 C+ 150 C69.4 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V34.5 nCEnhancement  
IPB020N10N5-VB


100V 180A 2m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.8687
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IPP015N04NGXKSA1


Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
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AUD 3.9403
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            Optimos 3      
IPD80P03P4L07ATMA1


MOSFET P-Ch -30V -80A DPAK-2 OptiMOS-P2
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Infineon 1
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AUD 3.9261
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- 80 A- 30 V6.8 mOhmsp - channel - 2 V- 55 C+ 175 C88 Wsmd/smtTO - 252 - 3Reelsi1 channel5 v , - 16 V80 nCenhancementaec - q101 
BSC0501NSI


MOSFET TRENCH <= 40V
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Infineon 1
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AUD 4.0494
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NTBS9D0N10MC


MOSFET PTNG 100V 9.0MOHM D2PAK-3L
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ON Semiconductor 1
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AUD 4.1836
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60 A100 V9 mOhmsN - Channel 4 V- 55 C+ 175 C68 WSMD/SMTSC - 70 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement  
SH8JB5TB1


MOSFET -40V Dual Pch+Pch, SOP8, Power MOSFET
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ROHM 1
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AUD 4.2279
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SIR468DP-T1-GE3


MOSFET 30V 40A 50W 5.7mohm @ 10V
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Vishay 1
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AUD 4.2666
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
IPA60R099P7-VB


600V 31A 90m@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS
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AUD 4.291
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