MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD30N6LF6AG


MOSFET Automotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 2425
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AUD 0.705
Multiples of: 2500

24 A60 V30 mOhmsN - Channel 1 V- 55 C+ 175 C40 WSmd/SmtDPAK - 3Reel-1 Channel+/- 20 V26 nCEnhancementAec - Q101Stripfet
FDA59N25


MOSFET 250V N-Ch MOSFET
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ON Semiconductor 59
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AUD 4.5197
Multiples of: 1

59 A250 V49 mOhmsN - Channel  - 55 C+ 150 C392 WThrough HoleTO - 3PN - 3TubeSi1 Channel30 V Enhancement  
NVMFD5C478NLT1G


MOSFET 40V 14.5 MOHM T8 SO-8FL DUAL DFN-8
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ON Semiconductor 1
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AUD 2.9287
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29 A40 V14.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C23 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V8.1 nCEnhancement  
IPDD60R105CFD7XTMA1


N-Channel 600V 31A (Tc) 198W (Tc) Surface Mount PG-HDSOP-10-1
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Infineon 1
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AUD 3.0209
Multiples of: 1

31 A600 V105 mOhmsN - Channel 4.5 V- 55 C+ 150 C198 WSMD/SMTHDSOP - 10 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V36 nCEnhancement  
FCD360N65S3R0


MOSFET SUPERFET3 650V 10A 360 mOhm
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ON Semiconductor 1
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AUD 3.1
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10 A650 V360 mOhmsN - Channel 2.5 V- 55 C+ 150 C83 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V18 nCEnhancement  
BUK6607-55C,118


N-Channel 55 V 100A (Tc) 158W (Tc) Surface Mount D2PAK
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Nexperia 1
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AUD 3.1612
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100 A55 V7 mOhmsN - Channel  - 55 C+ 175 C158 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V    
PXP012-30QLJ


MOSFET PXP012-30QL/SOT8002/MLPAK33
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Nexperia 1
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AUD 3.2358
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STF28NM50N


MOSFET N-Ch 500V 0.135 Ohm MDmesh II Power MO
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STMicroelectronics 1
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AUD 3.2841
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21 A500 V158 mOhmsn - channel  - 55 C+ 150 C35 Wthrough holeTO - 220 - 3 FPTubesi1 channel25 V50 nCenhancement mdmesh
AOTF125A60L-VB


600V 25A 120mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.3176
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SPB20N60S5


MOSFET COOL MOS N-CH 600V 20A
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Infineon 0
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AUD 3.1358
Multiples of: 1

20 A600 V190 mOhmsN - Channel  - 55 C+ 150 C208 WSmd/SmtTO - 263ReelSi1 Channel20 V Enhancement Coolmos
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