MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIR165DP-T1-GE3


MOSFET -30V Vds 20V Vgs PowerPAK SO-8
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Vishay 1
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AUD 3.3234
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60 A30 V3.8 mOhmsP - Channel 2.3 V- 55 C+ 150 C65.8 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V92 nC  Trenchfet, Powerpak
IRFI540GPBF


N-Channel 100 V 17A (Tc) 48W (Tc) Through Hole TO-220-3
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AUD 3.3264
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         Through HoleTO - 220 - 3TubeSi      
CRSQ024N08N


80V 180A 2m TO-247 MOSFETs ROHS
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CRMICRO 1
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AUD 3.403
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IRF640SPBF


N-Channel 200 V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 1
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AUD 3.4963
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18 A200 V180 mOhmsN - Channel 2 V- 55 C+ 150 C130 WSmd/SmtTO - 263 - 3TubeSi1 Channel10 V70 nCEnhancement  
Hot P20F50HP2-5600


MOSFET High Switching Speed High Voltage
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Shindengen 1
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AUD 3.7597
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            Hi - Potmos2      
DMT6004LPS-13


MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W
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Diodes Incorporated 1
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AUD 3.5636
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90 A60 V2.8 mOhmsN - Channel 3 V- 55 C+ 150 C2.1 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel10 V96.3 nCEnhancement Powerdi
SIR120DP-T1-RE3


MOSFET N-Channel 80 V D-S MOSFET
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Vishay 1
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AUD 3.6152
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106 A80 V3.55 mOhmsN - Channel 2 V- 55 C+ 150 C100 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V62.5 nCEnhancement Powerpak
IRLZ14PBF


MOSFET RECOMMENDED ALT 844-IRLZ14PBF
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Vishay 1
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AUD 3.677
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10 A60 V200 mOhmsN - Channel 1 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel5 V8.4 nCEnhancement  
BUK7Y1R4-40H


Nexperia
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Nexperia 1
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AUD 3.7594
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IRF6218PBF


MOSFET P Trench 150V 27A (Tc) 5V @ 250uA 150 mΩ @ 16A,10V TO-220 (TO-220-3) RoHS
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Infineon 0
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AUD 3.4171
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- 27 A- 150 V150 mOhmsP - Channel20 V - 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V21 nCEnhancement  
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