MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHP105N60EF-GE3


MOSFET EF Series Power MOSFET With Fast Body Diode
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Vishay 1
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AUD 6.3482
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29 A600 V88 mOhmsN - Channel 5 V- 55 C+ 150 C Through HoleTO - 220AB - 3 Si1 Channel30 V35 nCEnhancement Trenchfet
SiHG21N80AEF-VB


800V 20A 205mΩ@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 6.3736
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NTE2994


Transistor: N-MOSFET; 450V; 10A; TO220F
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NTE 1
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AUD 6.4567
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IPW60R099CPFKSA1


Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
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Infineon 1
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AUD 6.4194
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            Coolmos Cp      
SPW47N60C3-VB


600V 47A 60m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 6.1375
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FCH067N65S3-VB


650V 36A 75mΩ@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 6.6271
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TK49N65W5-VB


650V 41A 62m@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 6.6271
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IPD60R280CFD7ATMA1


650V 9A 51W 280mO@3.6A,10V N Channel TO-252-3 MOSFETs ROHS
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Infineon 1
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AUD 6.9382
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9 A600 V237 mOhmsN - Channel 3.5 V- 55 C+ 150 C51 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V18 nCEnhancement Coolmos
TK39N60W5-VB


600V 47A 60m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 1
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AUD 6.6271
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SIHG32N50D-GE3


Vishay Semiconductors MOSFET 500V 150mOhm10V 30A N-Ch D-SRS
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Vishay 1
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AUD 7.2936
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30 A500 V150 mOhmsN - Channel 5 V- 55 C+ 150 C390 WThrough HoleTO - 247AC - 3-Si1 Channel30 V64 nCEnhancement  
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